The dielectric charging constitutes a major problem that still inhibits the commercial application of RF MEMS capacitive switches. The effect arises from the presence of the dielectric film (Fig.1a), which limits the displacement of the suspended electrode and determines the device pull-down state capacitance. Macroscopically, the dielectric charging is manifested through the shift (Fig.1b) (Re...

This paper presents an optical device capable of the simultaneous measurement of the surface plasmon resonance (SPR) spectrum, which provides information regarding the change in the dielectric constant of the binding analytes, and the surface-enhanced Raman scattering (SERS) spectrum, which yields analytical data regarding the structural changes of the analytes. SPR sensing is an established te...

Dielectric/metal/dielectric (DMD) electrodes have the potential to significantly increase the absorption efficiency and photocurrent in flexible organic solar cells. We demonstrate that this enhancement is attributed to a broadband cavity resonance. Silver-based semitransparent DMD electrodes with sheet resistances below 10 ohm/sq. are fabricated on flexible polyethylene terephthalate (PET) sub...

We have investigated time-dependent dielectric breakdown (TDDB) in high-voltage AlGaN/GaN MetalInsulator-Semiconductor High Electron Mobility Transistors (MIS-HEMTs) biased in the OFF state. This is an important reliability concern that has been overlooked. Towards this goal, we have developed a novel methodology using ultraviolet light that allows us to separate the permanent effects of dielec...

Active beam-steering devices near the optical frequencies have long been sought after due to their applications in communication, defense, and display technologies; however, the challenge lies in achieving actively tunable structures near these frequencies. An array of metal-dielectric-metal plasmonic resonators is demonstrated as a dynamic beam-steering device to operate at midinfrared wavelen...

We present a novel approach for achieving tightly concentrated optical field by a hybrid photonic-plasmonic device in an integrated platform, which is a triangle-shaped metal taper mounted on top of a dielectric waveguide. This device, which we call a plasmomic light concentrator (PLC), can achieve vertical coupling of light energy from the dielectric waveguide to the plasmonic region and light...

We describe a sensor for the measurement of thin dielectric layers capable of operation in a variety of environments. The sensor is obtained by microfabricating a capacitor with interleaved aluminum fingers, exposed to the dielectric to be measured. In particular, the device can measure thin layers of solid frozen from a liquid or gaseous medium. Sensitivity to single atomic layers is achievabl...

This paper presents details on ultra thin (silicon dioxide and silicon nitride based composite structures) dielectrics that have the potential for meeting future device requirements. The increase in gate leakage current is a major problem for scaled conventional gate oxide in advanced device technology. Approaches to minimize this problems have been reviewed. Various Gate, Interlayer and DRAM d...

To manage the increasing static leakage in low power applications and reduced Ion/Ioff due to aggressive scaling of MOS transistors, Tunnel FET (TFET) devices are considered as the most promising candidates because of their excellent immunity against such important short channel effects. Solutions for leakage reduction as well as improving on current of the device are sought at the device desig...

A one-transistor and one-resistor (1T1R) architecture with a resistive random access memory (RRAM) cell connected to an organic thin-film transistor (OTFT) device is successfully demonstrated to avoid the cross-talk issues of only one RRAM cell. The OTFT device, which uses barium zirconate nickelate (BZN) as a dielectric layer, exhibits favorable electrical properties, such as a high field-effe...