The concept of self-healing dielectric polymers has been heatedly discussed, with the expectation high damage resistance and longer service time. However, there is still a lack analysis on competitive relationship between electrical degradation self-healing. authors discussed this in two stages: design strategies operation polymers. Since requirements for excellent insulating or mechanical prop...

Barium titanate single crystals had been placed in 0.01M NaOH solution to deposit hydrogen on their electrodes through the electrolysis of water. Two kinds of time-dependent changes in dielectric properties of the single crystals were observed: One occurred in the course of hydrogen deposition and the other lasted for a long period of time after the deposition. The diffusion of hydrogen and in ...

As technology scales down into the nanometer region, the reliability mechanism caused by time dependent dielectric breakdown (TDDB) has become one of the major reliability concerns. TDDB can lead to performance degradation or logic failures in nanoscale CMOS devices, and can cause significant increase of leakage power in the standby mode. In this paper, the TDDB effects on the delay and power o...

We have investigated time-dependent dielectric breakdown (TDDB) in high-voltage AlGaN/GaN MetalInsulator-Semiconductor High Electron Mobility Transistors (MIS-HEMTs) biased in the OFF state. This is an important reliability concern that has been overlooked. Towards this goal, we have developed a novel methodology using ultraviolet light that allows us to separate the permanent effects of dielec...

Ultra-high mobility compound semiconductor-based MOSFETs and quantum-well FETs could enable the next generation of logic transistors operating at low supply voltages since these materials exhibit excellent electron transport properties. While the long channel In0.53Ga0.47As MOSFET characteristics exhibit promising characteristics with unpinned Fermi level at the InGaAs-dielectric interface, the...

We have analyzed the electromagnetic properties of small and long YBa2Cu3O72x grain-boundary Josephson junctions. The Swihart velocity increases with junction width ~w! while the ratio of the relative dielectric constant to the barrier thickness («/t) decreases. We found that the product w3«/t is approximately constant. These results have been explained in the framework of the filamentary model...

Flexible In-Ga-ZnO (IGZO) thin film transistor (TFT) on a polyimide substrate is produced by employing a thermally stable SA7 organic material as the multi-functional barrier and dielectric layers. The IGZO channel layer was sputtered at Ar:O2 gas flow rate of 100:1 sccm and the fabricated TFT exhibited excellent transistor performances with a mobility of 15.67 cm2/Vs, a threshold voltage of 6....

Recently, photonic crystals doped with liquid crystal (LC) material havegained much research interest. In this article new ternary one-dimensional photoniccrystal introduced and studied. The liquid crystal layer of 5CB and 5PCH is sandwichedby two dielectric layers. For the first time, we use four structures SiO2/UCF35/CaF2,SiO2/5CB/CaF2, NFK51/UCF35/NPSK53 and NFK51/5CB/NPSK53. The effect ofte...

The scaling of complementary metal oxide semiconductor (CMOS) transistors has led to the silicon dioxide layer used as a gate dielectric becoming so thin (1.4 nm) that its leakage current is too large. It is necessary to replace the SiO2 with a physically thicker layer of oxides of higher dielectric constant (κ) or ‘high K’ gate oxides such as hafnium oxide and hafnium silicate. Little was know...