Field Programmable Gate Array (FPGA) attributes of logic configurability, bitstream storage, and dynamic signal routing can be realized by leveraging the complementary benefits of emerging devices with Complementary Metal Oxide Semiconductor (CMOS)-based devices. In this paper, a novel Carbon/Magnet Lookup Table (CM-LUT) is developed and evaluated by trading off a range of mixed heterogeneous t...

Due to aggressive scaling and process imperfection in sub-45 nm technology node Vt (threshold voltage) shift is more pronounced causing large variations in circuit response. Therefore, this paper presents the analyses of various popular 1-bit digital summing circuits in light of PVT (process, voltage and temperature) variations to verify their functionality and robustness. The investigation is ...

As silicon semiconductor device feature size scales down to the nanometer range, planar bulk CMOS design and fabrication encounter significant challenges nowadays. Carbon Nanotube Field Effect Transistor (CNTFET) has been introduced for high stability, high performance and low power SRAM cell design as an alternative material. Technology scaling demands a decrease in both VDD and VT to sustain ...

The high-frequency capability of carbon nanotube field-effect transistors is investigated by simulating the small-signal performance of a device with negative-barrier Schottky contacts for the source and drain, and with a small, ungated region of nanotube between the end contacts and the edge of the wrap-around gate electrode. The overall structure is shown to exhibit resonant behaviour, which ...

MOS transistor play a vital role in today VLSI technology. In CMOS based design, symmetry should be followed in circuit operation. Most of the complex circuits are allowed to design in CMOS, however, there are several drawbacks present in this complementary based design. CMOS has lost its credentiality during scaling beyond 32nm. Scaling down causes severe short channel effects which are diffic...

Carbon Nanotube FETs (CNFETs) are showing significant promise in nanoelectronics. They are one of the principle areas of research that are seen as having the capability of replacing MOSFET transistors. In fact, their performance is much better than MOSFETs below 10nm [1], with the operation frequencies of CNFET devices being up to1000 times greater. This project investigates various properties ...

Simulation studies of carbon nanotube field-effect transistors (CNFETs) are presented using models of increasing rigour and versatility that have been systematically developed. Firstly, it is demonstrated how one may compute the standard tight-binding band structure. From this foundation, a self-consistent solution for computing the equilibrium energy band diagram of devices with Schottkybarrie...