نتایج جستجو برای: circuit reliability

تعداد نتایج: 254412  

2013
Yue Xi Feng Liu Hongli Yuan Dongbo Pan

This thesis proposes a safety instrument system which is based on D-S evidence theory, including sensor, logic voting system and execution unit. While the logic voting system concludes the input circuit, processor, output circuit and the diagnosis module based on D-S evidence theory. According to the diagnosis module in multi-channel logic voting system and calculation based on D-S evidence the...

2011
Rafik Medjoudj Rabah Medjoudj

The electrical substation components are often subject to degradation due to over-voltage or over-current, caused by a short circuit or a lightning. A particular interest is given to the circuit breaker, regarding the importance of its function and its dangerous failure. This component degrades gradually due to the use, and it is also subject to the shock process resulted from the stress of iso...

پایان نامه :وزارت علوم، تحقیقات و فناوری - دانشگاه علم و صنعت ایران - دانشکده مهندسی برق 1387

در این پایان نامه ابتدا کانال رادیوی شناختگر از دیدگاه تیوری اطلاعاتی مورد بررسی قرار می گیرد و نرخ های قابل دستیابی در سناریوی کاهش تداخل رادیوی شناختگر مورد بررسی قرار می گیرد. سپس نرخ های قابل دستیابی امن در کانال رادیوی شناختگر ارایه می گردد و کاهش نرخی که از نظر تیوری اطلاعاتی به منظور امن شدن کانال هزینه می گردد در کانال با نویز جمع شونده گوسی استنتاج می شود در ادامه اثر برخی محدودیت های ...

2006
Zhijian Lu Wei Huang Mircea Stan Kevin Skadron John Lach

Thermal effects are becoming a limiting factor in high performance circuit design due to the strong temperature dependence of leakage power, circuit performance, IC package cost and reliability. While many interconnect reliability models assume a constant temperature, this paper analyzes the effects of temporal and spatial thermal gradients on interconnect lifetime in terms of electromigration....

Journal: :Energies 2021

Like the widely-used semiconductor switch, Insulated Gate Bipolar Transistors (IGBTs) are subject to many failures and degradation in power electronic converters. In Short Circuit Fault (SCF), as most reported IGBTs, drastic, sudden temperature rise, peak SCF current widespread owing a relatively long delay of protection subsystem. This paper proposes strategy limit junction rise by limiting ad...

2009
Timothy J. Dysart Peter M. Kogge

by Timothy J. Dysart Much has been written and predicted about the demise of Moore’s law in advancing computing technology. While many of these predictions have fallen by the wayside, the end may be approaching since the ”red brick wall” (areas where scaling progress may end if breakthroughs are not identified) is barely being pushed further into the future. As a result, numerous nanoelectronic...

1998
R. D. Blanton Seth Copen Goldstein Herman Schmit

The advent of reconfigurable hardware as a computing medium creates a multi-dimensional design space where trade-offs between power, speed, cost, and reliability are now possible. Dynamic reconfiguration allows these trade-offs to be made on-line to adapt to various environmental changes. Furthermore, the cost of designing reliable circuits is greatly reduced since varying levels of reliability...

2016
Anitha Patibandla

— Reliability of Circuits is one of the major concerns in VLSI circuits and systems designs. Negative Bias Temperature Instability(NBTI), which has a deteriorating effect on the threshold voltage and the drive current of semiconductor devices, is emerging as a major reliability degradation mechanism [1].An important Reliability issue in the recent times is the Negative bias temperature instabil...

2012
H. Puchner

INTRODUCTION The gate dielectric has been the subject of constant improvement and innovation since the invention of the MOSFET transistor. The gate oxide is the major transistor component to control the transistor channel underneath with respect to leakage currents as well as saturation drive currents. The demand for higher drive currents and better performance has also pushed the gate oxide th...

1996
Yusuf Leblebici

The hot-carrier induced degradation of the transient circuit performance in CMOS digital circuit structures is investigated and modeled. Delay-time degradation as a result of transistor aging, as opposed to current degradation, is devised as a more realistic measure of long-term circuit reliability. It is shown that for a wide class of circuits, the performance degradation due to dynamic hot-ca...

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