نتایج جستجو برای: buried layer

تعداد نتایج: 292998  

Journal: :Optics express 2006
Tatiana V Teperik Vyacheslav V Popov F Javier García de Abajo Mamdouh Abdelsalam Philip N Bartlett Tim A Kelf Yoshihiro Sugawara Jeremy J Baumberg

We study the optical plasmonic properties of metal surfaces which have a periodic lattice of voids buried immediately beneath their flat upper surface. Light reflection spectra calculated in the framework of a self-consistent electromagnetic multiple-scattering layer-KKR approach exhibit two types of plasmon resonances originating from the excitation of different plasmon modes: surface plasmon-...

2018
Dong-Bo Wang Jin-Chuan Zhang Feng-Min Cheng Yue Zhao Ning Zhuo Shen-Qiang Zhai Li-Jun Wang Jun-Qi Liu Shu-Man Liu Feng-Qi Liu Zhan-Guo Wang

In this work, quantum cascade lasers (QCLs) based on strain compensation combined with two-phonon resonance design are presented. Distributed feedback (DFB) laser emitting at ~ 4.76 μm was fabricated through a standard buried first-order grating and buried heterostructure (BH) processing. Stable single-mode emission is achieved under all injection currents and temperature conditions without any...

2007
D. E. Kowalewski D. R. Marchant

A remnant of Taylor Glacier ice rests beneath a 40-to-80-cm-thick layer of sublimation till in central Beacon Valley, Antarctica. Our 1-D vapor diffusion model, with input from micrometeorological data collected during the 2004 austral summer, shows that vapor flows into and out of sublimation till at rates dependent on the non-linear variation of vapor concentration with depth. Although measur...

2017
Matthias Schreck Stefan Gsell Rosaria Brescia Martin Fischer

A detailed mechanism for heteroepitaxial diamond nucleation under ion bombardment in a microwave plasma enhanced chemical vapour deposition setup on the single crystal surface of iridium is presented. The novel mechanism of Ion Bombardment Induced Buried Lateral Growth (IBI-BLG) is based on the ion bombardment induced formation and lateral spread of epitaxial diamond within a ~1 nm thick carbon...

Journal: :Applied optics 2009
Shiguang Li Jing Liu Nam-Trung Nguyen Zhong Ping Fang Soon Fatt Yoon

Measuring buried, undercut microstructures is a challenging task in metrology. These structures are usually characterized by measuring their cross sections after physically cutting the samples. This method is destructive and the obtained information is incomplete. The distortion due to cutting also affects the measurement accuracy. In this paper, we first apply the laser fluorescent confocal mi...

2002
R. L. Tokar W. C. Feldman T. H. Prettyman K. R. Moore D. J. Lawrence R. C. Elphic J. F. Mustard W. V. Boynton

[1] Mars Odyssey Gamma-Ray Spectrometer (GRS) neutron spectrometer data are analyzed to determine the concentration and boundary of buried water ice near the south pole. The measurements are consistent with a circumpolar layer of average ice concentration from 35 to 100% by weight and superposed dust with thickness density product 30 to 40 g/cm. The region of buried water ice extends from near ...

Journal: :Optics express 2014
Ying-Yu Lai Shen-Che Huang Tsung-Lin Ho Tien-Chang Lu Shing-Chung Wang

We report on the numerical analysis of the electrical and optical properties of current-injected III-nitride based vertical-cavity surface-emitting lasers (VCSELs) with three types of current confinement schemes: the conventional planar-indium tin oxide (ITO) type, the AlN-buried type without ITO, and the hybrid type. The proposed hybrid structure, which combines an ITO layer and an intracavity...

2009
Pablo Alonso-González Luisa González David Fuster Yolanda González Alfonso G. Taboada José Marı́a Ripalda Ana M. Beltrán David L. Sales Sergio I. Molina

In this work we report on the ability to form low density Ga(As)Sb quantum ring-shaped nanostructures (Q-rings) on GaAs(001) substrates by the droplet epitaxy technique. The Q-rings are formed by crystallization of Ga droplets under antimony flux. After being capped by a GaAs layer, these nanostructures show surface mounding features that are correlated with the buried nanostructures, as demons...

2007
G. Schrom S. Selberherr

A vertical npn bipolar transistor (BJT) which can be manufactured in a simple pwell CMOS process without additional process steps is described. The proposed BJT uses a p-well as base and an n+ S/D doping as emitter. The collector consists of the nsubstrate and does not require an nf buried layer or a highly doped substrate. The device is especially suitable for high-voltage applications in elec...

2012
Aneesh Nainani Ze Yuan Tejas Krishnamohan Brian R. Bennett J. Brad Boos Matthew Reason Mario G. Ancona Yoshio Nishi Krishna C. Saraswat

InxGa1-xSb is an attractive candidate for high performance III-V p-metal-oxide-semiconductor field effect transistors (pMOSFETs) due to its high bulk hole mobility that can be further enhanced with the use of strain. We fabricate and study InxGa1 xSb-channel pMOSFETs with atomic layer deposition Al2O3 dielectric and self-aligned source/drain formed by ion implantation. The effects of strain and...

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