Antimonide type II superlattices is expected to overtake HgCdTe as the preferred materials for infrared detection due their excellent photoelectric properties and flexible adjustable band structures. Among these compounds, InAs/GaSb represent most commonly studied materials. However, sophisticated physics associated with antimonide-based bandgap engineering concept started at beginning of 1990s...

Using a strain-rosette, we demonstrate the existence of transverse strain using time-resolved x-ray diffraction from multiple Bragg reflections in laser-excited bulk gallium arsenide. We find that anisotropic strain is responsible for a considerable fraction of the total lattice motion at early times before thermal equilibrium is achieved. Our measurements are described by a new model where the...

We address the inherent high-field magnetoresistance sMRd of indium antimonide epilayers on GaAs s001d, studying the modification of the MR when processed into a set of geometries. The changes produced by the geometries are quite subtle. The extraordinary MR geometry produces the highest low-field MR while the Corbino geometry produces the largest high-field magnetoresistance. We demonstrate th...

Aromatic aldehydes are smoothly converted into the corresponding acylals in good yields in the presence of 0.10 mol% Bi(OTf)3oxH20. Ketones are not affected under the reaction conditions. The highly catalytic nature of bismuth triflate and the fact that it is relatively non-toxic, easy to handle and insensitive to small amounts of air and moisture makes this procedure especially attractive for ...

Currently there is a worldwide trend to increase the diameter of crystals grown from elemental semiconductors and semiconductor compounds. According literary data 3–5 single nowadays 4 6 inches. So far up 75 mm indium antimonide have been in Russia. Indium element base for widest field solid state electronics, i.e., optoelectronics. used fabrication range linear photodetectors photodetector arr...

We demonstrate the extraordinary transmission of terahertz THz radiation through gratings of subwavelength apertures structured in indium antimonide InSb. This transmission can be attributed to the tunneling of surface plasmons polaritons which are excited in semiconductors at THz frequencies. By thermally controlling the permittivity of the grating the transmittance increases by more than one ...

Terahertz plasmonic resonances in semiconductor (indium antimonide, InSb) dimer antennas are investigated theoretically. The antennas are formed by two rods separated by a small gap. We demonstrate that, with an appropriate choice of the shape and dimension of the semiconductor antennas, it is possible to obtain large electromagnetic field enhancement inside the gap. Unlike metallic antennas, t...

We demonstrate a concept to study transient liquids with picosecond time-resolved x-ray scattering in a high-repetition-rate configuration. Femtosecond laser excitation of crystalline indium antimonide (InSb) induces ultrafast melting, which leads to a loss of the long-range order. The remaining local correlations of the liquid result in broad x-ray diffraction rings, which are measured as a fu...

This paper gives an overview of the materials and methods used for fabricating photovoltaic solar cell devices. The technologies discussed include those based on the use of silicon (in the crystalline, multicrystalline, amorphous and micro-crystalline forms), the IIIeV compounds (e.g. gallium arsenide, indium phosphide and gallium antimonide), the polycrystalline compounds (e.g. cadmium telluri...