The thin-film limit is derived by a nonconventional approach and equations for transmittance, reflectance and absorptance are presented in highly versatile and accurate form. In the thin-film limit the optical properties do not depend on the absorption coefficient, thickness and refractive index individually, but only on their product. We show that this formalism is applicable to the problem of...

Flexible active matrix display technology has been adapted to create new flexible photo-sensing electronic devices, including flexible X-ray detectors. Monolithic integration of amorphous silicon (a-Si) PIN photodiodes on a flexible substrate poses significant challenges associated with the intrinsic film stress of amorphous silicon. This paper examines how altering device structuring and diode...

This paper investigates the plastic deformation in mono-crystalline silicon under complex loading conditions. With the aid of various characterization techniques, it was found that the mechanism of plasticity in silicon is complex and depends on loading conditions, involving dislocations, phase transformations and chemical reactions. In general, plastic deformation in silicon is the coupled res...

The first successful deposition of 'micromorph' silicon tandem solar cells of the n-i-p-n-i-p configuration is reported. In order to implement the 'micromorph' solar cell concept, four key elements had to be prepared: First, the deposition of mid-gap, intrinsic microcrystalline silicon (μc-Si:H) by the 'gas purifier method', second, the amorphous silicon (a-Si:H) n-i-p single junction solar cel...

It is very interesting that magic electron affection promotes growth of nanocrystals due to nanoscale characteristics of electronic de Broglie wave which produces resonance to transfer energy to atoms. In our experiment, it was observed that silicon nanocrystals rapidly grow with irradiation of electron beam on amorphous silicon film prepared by pulsed laser deposition (PLD), and silicon nanocr...

In this work, we investigate heterojunction emitters deposited by Hot-Wire CVD on p-type crystalline silicon. The emitter structure consists of an n-doped film (20 nm) combined with a very thin intrinsic hydrogenated amorphous silicon buffer layer (5 nm). The microstructure of these films has been studied by Spectroscopic Ellipsometry in the UV-visible range. These measurements reveal that the ...

A new gamma camera based on hydrogenated amorphous silicon (a-Si:H) pixel arrays to be used in nuclear medicine is introduced. Various performance characteristics of a-Si:H imagers are reviewed and compared with those of currently used equipment. An important component in the a-Si:H imager is the scintillator screen. A new approach for fabrication of high resolution CsI(Tl) scintillator layers,...

The main objective of this research is to develop a micro and nanogap structure using dry anisotropic etching –Reactive Ion EtchingRIE. Amorphous silicon material is used in the micro and nanogap structure and gold as electrode. The fabrication processes of the micro and nanostructure are based on conventional photolithography, wet etching for the Al pattern and wet etching for a-Si pattern usi...