Articles you may be interested in Characterization of metal contacts for two-dimensional MoS2 nanoflakes Appl. Low-frequency noise in amorphous indium-gallium-zinc oxide thin-film transistors from subthreshold to saturation Appl. Low-frequency noise in a thin active layer-Si:H thin-film transistors

A nonlinear stochastic growth equation is derived from (i) the symmetry principles relevant for the growth of vapor deposited amorphous films, (ii) no excess velocity, and (iii) a low-order expansion in the gradients of the surface profile. A growth instability in the equation is attributed to the deflection of the initially perpendicular incident particles due to attractive forces between the ...

The development of low temperature, thin film transistor processes that has enabled flexible displays also presents opportunities for flexible electronics and flexible integrated systems. Of particular interest are possible applications in flexible, low metal content, sensor systems for unattended ground sensors, smart medical bandages, electronic ID tags for geo-location, conformal antennas, n...

Continual evolution of the CMOS technology requires thinner gate dielectric to maintain high performance. However, when moving into the sub-65 nm CMOS generation, the traditional poly-Si gate approach cannot effectively reduce the gate thickness further due to the poly-depletion effect. Fully silicided metal gate (FUSI) has been proven to be a promising solution. FUSI metal gate can significant...

Electrical characteristic of amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) on flexible substrate are investigated with various channel width and length. Its electrical properties according to the physical dimension of the channel are analyzed through Technology Computer-Aided Design (TCAD) simulation. Index Terms — Density of states (DOS), flexible, In-GaZn-O (IGZO),...

This work reported a high quality photonic crystal film with an ultra-narrow photonic bandgap obtained via a chemical synthetic route. The bandgap is much narrower than that of traditional colloidal crystals, which makes the film qualified for use in optical devices. The narrow PBG originates from not only the high crystallinity and uniform orientations of microcrystals within the film but also...

Phase transformation of thin film (∼30 nm) In2Se3/Si(111) (amorphous → crystalline) was performed by resistive annealing and the reverse transformation (crystalline → amorphous) was performed by nanosecond laser annealing. As an intrinsic-vacancy, binary chalcogenide semiconductor, In2Se3 is of interest for non-volatile phasechange memory. Amorphous InxSey was deposited at room temperature on S...

Relaxation processes associated with the glass transition in nonferroelectric and ferroelectric polyamide (PA) 11 are investigated by means of differential scanning calorimetry, dynamic mechanical analysis, and dielectric relaxation spectroscopy (DRS) in order to obtain information about the molecular mobility within the amorphous phase. In particular, the effects of melt quenching, cold drawin...

Solar cells are becoming a highly promising alternative energy source for various markets. In the last five years or so a tremendous amount of research effort has been put into increasing the efficiency of solar cell technology and reducing its manufacturing cost. It is believed that success in both of these areas will further propel its use in various markets. The two major structures commerci...

We report a growth front morphology study of thermally evaporated amorphous Si films using atomic force microscopy. Since there are no well-defined atomic steps on an amorphous film surface, there is no Schwoebel barrier effect which would give rise to a moundlike morphology. The dynamic scaling characteristics observed during growth are unambiguously explained by a noise-induced growth mechani...