Transport measurements on an etched graphene nanoribbon are presented. It is shown that two distinct voltage scales can be experimentally extracted that characterize the parameter region of suppressed conductance at low charge density in the ribbon. One of them is related to the charging energy of localized states, the other to the strength of the disorder potential. The lever arms of gates var...

A time-dependent effective-mass SchrödingerPoisson solver is used to study the frequency dependence of the gate capacitance of a short Schottky-barrier carbon nanotube field-effect transistor (CNTFET). A delayed (re)charging of the channel causes a (non-quasi-static) drop of the gate capacitance for higher frequencies on a characteristic scale, which can be related to the escape time of the car...

A quantum phase transition that was recently observed in a high-mobility silicon metal-oxide-semiconductor field-effect transistor is analyzed in terms of a scaling theory. The most striking characteristic of the transition is a divergence of the thermopower, according to an inverse linear law, as a critical value of the electron density is approached. A scaling description of this transition y...

© 2011 ETRI Journal, Volume 33, Number 1, February 2011 A case study of an active transmitting patch antenna revealed a characteristic loop locus of DC power versus RF output power as drive frequency was varied, with an operational bandwidth substantially smaller than the impedance bandwidth of the radiator. An approximate simulation technique, based on separation of the output capacitance of t...

Drift–diffusion model is applied for transport in a one–dimensional field effect transistor. A unified description is given for a semiconductor nanowire and a long single–wall nanotube basing on a self–consistent electrostatic calculations. General analytic expressions are found for basic device characteristic which differ from those for bulk transistors. We explain the difference in terms of w...

As the scaling of Si MOSFET approaches towards its limiting value, new alternatives are coming up to overcome these limitations. In this paper first we have reviewed carbon nanotube field effect transistor (CNTFET) and types of CNTFET. We have then studied the effect of channel length and chirality on the drain current for planer CNTFET. The Id~Vd curves for planer CNTFETs having different chan...

This paper presents the design of a monobit 6 order delta-sigma modulator in a GaAs 0.2 μm technology. The central frequency is 750 MHz and the sampling frequency is 3 GHz. The reached resolution is 10.5 bits over a 10 MHz bandwith. The modulator operates from ± 5 V power supplies and consumes 5.7 W. Each block of the modulator is presented at transistor level. Two drawbacks are pointed out: lo...

It is shown that the low energy spectrum of mesoscopic superconductors coupled by Josephson interaction can be probed by two-electron tunneling from a normal electrode. The Andreev reflection in the NS junction of a normal-superconductor-superconductor double junction (NSS transistor) provides a unique spectroscopic tool to probe the coherent Cooper pair tunneling and the energy spectrum of the...

IGBT Fundamentals The Insulated Gate Bipolar Transistor (IGBT) is a minority-carrier device with high input impedance and large bipolar current-carrying capability. Many designers view IGBT as a device with MOS input characteristics and bipolar output characteristic that is a voltage-controlled bipolar device. To make use of the advantages of both Power MOSFET and BJT, the IGBT has been introdu...

This paper presents a four-quadrant multiplier based on square-law characteristic of floating gate MOSFET (FGMOS) in saturation region. The proposed circuit uses square-difference identity and the differential voltage squarer proposed by Gupta et al. to implement the multiplication function. The proposed multiplier employs eight FGMOS transistors and two resistors only. The FGMOS implementation...