A tunneling field effect transistor (TFET) attracts attention, because TFET circuits can achieve better energy efficiency than conventional MOSFET circuits. Although design issues in ultra low voltage logic circuits, such as the minimum operatable voltage (V DDmin), have been investigated for MOSFET's, V DDmin for TFET's have not been discussed. In this paper, V DDmin of TFET logic circuits is ...

Electron transport is discussed for an ensemble of fused conical indium phosphide nanowires bridging two hydrogenated n-silicon electrodes. The current-voltage (Id-Vd) characteristics exhibit a Coulomb staircase in dark with a period of ~ 1 V but it disappears under light illumination in some devices, while Id-Vd is featureless smooth monotonic curve in other devices. It is shown that transport...

Silicon nanowires (NWs) could enable low-cost and efficient photovoltaics, though their performance has been limited by nonideal electrical characteristics and an inability to tune absorption properties. We overcome these limitations through controlled synthesis of a series of polymorphic core/multishell NWs with highly crystalline, hexagonally-faceted shells, and well-defined coaxial (p/n) and...

Using phosphorus-doped ZnO nanowire (NW) arrays grown on silicon substrate, energy conversion using the p-type ZnO NWs has been demonstrated for the first time. The p-type ZnO NWs produce positive output voltage pulses when scanned by a conductive atomic force microscope (AFM) in contact mode. The output voltage pulse is generated when the tip contacts the stretched side (positive piezoelectric...

We investigate the inhibited spontaneous emission of telecom-band InAs quantum disks (Qdisks) in InP nanowires (NWs). We have evaluated how the inhibition is affected by different disk diameter and thickness. We also compared the inhibition in standing InP NWs and those NWs laying on silica (SiO(2)), and silicon (Si) substrates. We found that the inhibition is altered when we put the NW on the ...

This study investigates a device’s ability to boost its on-state current and subthreshold behavior using ferroelectric field-effect transistor (FeFET) with an ultrathin sub-5-nm Hf 1-x Zr x O2 (HZO). A conventional (FET) pure hafnium ...

The effects of dietary supplemental guanidinoacetic acid (GAA) on performance, biochemical indices and meat pH of broilers with cold-induced ascites were studied. A total of 640 day-old male broiler chicks (Cobb 500) were assigned to four dietary treatments including control diet; control diet supplemented with either 0.6, 1.2 or 1.8 g of GAA per kg of feed. Each treatment was replicated in 8 b...

High leakage currents and short channel effects become significant enough to be the major concerns for circuit designers as semiconductor devices are miniaturized. Tunnel field effect transistor(TFET) show good scalability and have very low leakage current .These transistors have very low leakage current, good sub-threshold swing, improved short channel characteristics and lesser temperature se...

In this paper, we analyze the variability of III-V homojunction tunnel FET (TFET) and FinFET devices and 32-bit carry-lookahead adder (CLA) circuit operating in near-threshold region. The impacts of the most severe intrinsic device variations including work function variation (WFV) and fin line-edge roughness (fin LER) on TFET and FinFET device Ion, Ioff, Cg, 32-bit CLA delay and power-delay pr...

We report experimental demonstrations of electrostatically actuated, contact-mode nanoelectromechanical switches based on very thin silicon carbide (SiC) nanowires (NWs). These NWs are lithographically patterned from a 50 nm thick SiC layer heteroepitaxially grown on single-crystal silicon (Si). Several generic designs of in-plane electrostatic SiC NW switches have been realized, with NW widths...