Articles you may be interested in Schottky barrier inhomogeneity for graphene/Si-nanowire arrays/n-type Si Schottky diodes Appl.

This paper focused on the characterization of electrochemical behavior of a martensitic stainless steel in the acidic solutions. For this purpose, electrochemical parameters were derived from potentiodynamic polarization, Mott Schottky analysis and electrochemical impedance spectroscopy (EIS) techniques. The potentiodynamic polarization results showed that corrosion current density of AISI 420 ...

Mg alloys have a vast usage where weight reduction is really significant since they do the features really well for materials of ultra-light weight. However, Mg is inherently a reactive metal and its alloys generally possess quite weak corrosion resistance that widely restricts their technological usages, especially in some rough service conditions. Despite, many investigations on the passive a...

The effects of H2SO4 concentration on the electrochemical behaviour of passive films formed on AISI 304 stainless steel were investigated using by potentiodynamic polarization, Mott–Schottky analysis and electrochemical impedance spectroscopy (EIS). Potentiodynamic polarization indicated that the corrosion potentials were found to shift towards negative direction with an increase in solution co...

in this research work, alpha particle detector is made using semi-insulating gaas. a surface barrier detector with a semi-insulating gaas substrate at room temperature with pressure of 10-4 torr under -particle radiation with 5.48 mev of am241 source, have been under investigation. energy resolution of 2 and 3 mm schottky diameter have been matured and compared with the effect of voltage varia...

The formation of a Schottky barrier at the metal-semiconductor interface is widely utilised in semiconductor devices. With the emerging of novel Schottky barrier based nanoelectronics, a further microscopic understanding of this interface is in high demand. Here we provide an atomistic insight into potential barrier formation and band bending by ab initio simulations and model analysis of a pro...

Surface potential measurement on atomically thin MoS2 flakes revealed the thickness dependence in Schottky barriers formed between high work function metal electrodes and MoS2 thin flakes. Schottky diode devices using mono- and multi-layer MoS2 channels were demonstrated by employing Ti and Pt contacts to form ohmic and Schottky junctions respectively. Characterization results indicated n-type ...

Gallium Nitride (GaN) is a very promising material for either electronic and optoelectronic devices because of its high breakdown field, and peak and saturated electron drift velocity. Hence, despite of its lower electron mobility, GaN Schottky diodes might represent a good alternative to GaAs Schottky diodes for LO power generation at millimetre-wave bands due to a much better power handling c...

this paper focused on the characterization of electrochemical behavior of a martensitic stainless steel inthe acidic solutions. for this purpose, electrochemical parameters were derived from potentiodynamicpolarization, mott schottky analysis and electrochemical impedance spectroscopy (eis) techniques.the potentiodynamic polarization results showed that corrosion current density of aisi 420 sta...

Schottky barriers formed by graphene (monolayer, bilayer, and multilayer) on 2D layered semiconductor tungsten disulfide (WS2) nanosheets are explored for solar energy harvesting. The characteristics of the graphene-WS2 Schottky junction vary significantly with the number of graphene layers on WS2, resulting in differences in solar cell performance. Compared with monolayer or stacked bilayer gr...