نتایج جستجو برای: pulsed pecvd
تعداد نتایج: 36207 فیلتر نتایج به سال:
Freestanding single-walled carbon nanotubes (SWCNTs) have been synthesized in a vertical direction, perpendicular to the growth substrate, using applied DC substrate bias in a microwave plasma-enhanced chemical vapor deposition (PECVD) synthesis process. The degree of alignment and spatial density of SWCNTs demonstrate a strong dependence on the magnitude of applied bias, with increased alignme...
Antimicrobial coatings deposited onto ultra high molecular weight polyethylene (UHMWPE) films were investigated using an atmospheric pressure - plasma enhanced chemical vapor deposition (AP-PECVD) process. Varying concentrations of a guanidine-based liquid precursor, 1,1,3,3-tetramethylguanidine, were used, and different deposition conditions were studied. Attenuated total reflectance - Fourier...
A single-layer graphene is synthesized on Cu foil in the absence of H(2) flow by plasma enhanced chemical vapor deposition (PECVD). In lieu of an explicit H(2) flow, hydrogen species are produced during the methane decomposition process into their active species (CH(x<4)), assisted with the plasma. Notably, the early stage of growth depends strongly on the plasma power. The resulting grain size...
We review our recent results on the growth and characterization of silicon nanowires (SiNWs). Vapourphase deposition techniques are considered, including chemical vapour deposition (CVD), plasma-enhanced chemical vapour deposition (PECVD), high-temperature annealing, and thermal evaporation. We present complementary approaches to SiNW production. We investigate the low-temperature (down to 300 ...
In studies of hydrogenated amorphous silicon (a-Si:H) n – i – p solar cells fabricated by rf plasma-enhanced chemical vapor deposition ~PECVD!, we have found that the maximum open circuit voltage (Voc) is obtained by incorporating p-type doped Si:H layers that are protocrystalline in nature. Specifically, these optimum p layers are prepared by PECVD in the a-Si:H growth regime using the maximum...
*Correspondence: Andrew Michelmore, Mawson Institute, Building V, Mawson Lakes Campus, University of South Australia, Mawson Lakes, 5095, SA, Australia e-mail: andrew.michelmore@ unisa.edu.au Plasma enhanced chemical vapor deposition (PECVD) can be used to fabricate surfaces with a wide range of physical and chemical properties and are used in a variety of applications. Despite this, the mechan...
Thin silicon nitride (Si3N4) films deposited using plasma-enhanced chemical deposition (PECVD) method have been used as metalinsulator-metal (MIM) capacitor dielectric for GaAs heterojunction bipolar transistor (HBT) technology. The characteristics of the films, which were deposited at 300C, were found to be dependent on how the PECVD film was deposited. A silicon nitride film deposited as a mu...
Graphene and its derivatives hold a great promise for widespread applications such as field-effect transistors, photovoltaic devices, supercapacitors, and sensors due to excellent properties as well as its atomically thin, transparent, and flexible structure. In order to realize the practical applications, graphene needs to be synthesized in a low-cost, scalable, and controllable manner. Plasma...
Polypropylene (PP) powders are coated with silica nanoparticles in a fluidized bed to improve the flow behavior of and processability powder fusion. The produced situ via dusty plasma-enhanced chemical vapor deposition (PECVD) an atmospheric-pressure Ar/O2 plasma jet fixed at distributor plate bed. Hexamethyldisiloxane is used as precursor nanoparticles. influence oxygen concentration gas numbe...
Highly customized and free-formed products in flexible hybrid electronics (FHE) require direct pattern creation such as inkjet printing (IJP) to accelerate product development. In this work, we demonstrate the growth of graphene on Cu ink deposited polyimide (PI) by means plasma-enhanced chemical vapor deposition (PECVD), which provides simultaneous reduction, sintering, passivation further red...
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