The nonlocal electrons heating in transistor heterostructures based on gallium nitride and arsenide is compared. It shown that if, comparison with a pure bulk material, the case of GaAs double doped pseudomorphic heterostructures, real space transfer significantly reduces their drift velocity overshot region strong field, then for GaN-based decrease studied cases does not exceed 30%.

Using electron energy loss spectroscopy, we have probed the spin waves of fcc(100) cobalt after capping with 1–3 atom layers of pseudomorphic nickel or up to 12 atom layers of copper. The intensity decay of the spin wave signal is quantitatively described by the mean-free path of the incident and the scattered electron within the capping layer. The observed spin waves are therefore localized at...

Ga adsorption on the Si(112) surface results in the formation of pseudomorphic Ga atom chains. Compressive strain in these atom chains is relieved via creation of adatom vacancies and their self-organization into meandering vacancy lines. The average spacing between these line defects can be controlled, within limits, by adjusting the chemical potential mu of the Ga adatoms. We derive a lattice...

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