The propagation of defects in semiconductor heterostructures has been studied both theoretically and experimentally. The simple model shows that defects originating from lattice-matched regions can be prevented from entering, or can be trapped by, a pseudomorphic layer, depending on the signs of the strain induced by the defect and the strain in the pseudomorphic layer. A pseudomorphic layer ca...

Due to a typo in our theoretical calculations of the pseudomorphic out-of-plane lattice constant a, “theory pseudomorphic” curve (orange dashed line) Figure 4b original article[1] was unfortunately plotted incorrectly. We corrected and modified graph below, which replaces 4b. This correction has no consequences on results this study or modifies discussion behavior constants strain states layers.

The structure and morphology of ultrathin lattice matched CaF2 films of very few monolayers thickness, which were deposited on Si 111 substrates by molecular-beam epitaxy, have been studied in situ by synchrotron based grazing incidence x-ray diffraction. Even for the thinnest investigated film of three monolayers thickness, the in-plane structure of the CaF2 film is determined by a lateral sep...

The underpotential deposition (UPD) of copper on a Pt(111) electrode and the influence of gas coadsorbates, i.e. CO and CO2, on the thus deposited copper layer were studied in a 0.1 M HClO4 electrolyte by means of EC-STM. By UPD, an atomically flat Cu layer is formed, which exhibits a pseudomorphic (1 × 1) structure. However, it contains several point defects due to which its total coverage is ...

A self-consistent analysis of the quantum-well emission transistor (QWET) is presented allowing an exact calculation of the device quantum properties. Poisson’s and Schrcdinger’s equation are solved numerically using a finite-difference method on a self-consistent basis. Pseudomorphic AlGaAs/InGaAs designs with 150/o-20% excess In are suggested for improving the device performance. Design with ...

Citation Deiter, Carsten et al. Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. The MIT Faculty has made this article openly available. Please share how this access benefits you. Your story matters. The structure and morphology of ultrathin lattice matched CaF 2 films of very few m...

A InGaP/InGaAs/GaAs dual channel pseudomorphic HEMT (DCPHEMT) with interesting triple doped sheets having gate length 800nm is modeled and simulated by using 2-dimensional simulation package ATLAS from Silvaco. Different DC and microwave performances of the above device are analyzed and investigated to judge the potential of the device for highperformance digital device applications. Due to the...

1. Introduction Ordered mesoporous silicas such as micelle-templated silicas (MTS) feature unique textural properties in addition to their high surface area: narrow mesopore size distributions, controlled pore size and connectivity make them particularly suitable for chromatographic applications (size exclusion chromatography, HPLC and capillary gas chromatography). In these applications, the p...

The template-free formation of oriented MgO nanowall arrays is successfully achieved by a two-step synthesis route (i) electrodeposition vertically aligned hydroxide and (ii) its topotactic-like pseudomorphic transformation to oxide.