Plasma enhanced chemical vapor deposition (PECVD) is a versatile technique to obtain vertically densealigned carbon nanotubes (CNTs) at lower temperatures than chemical vapor deposition (CVD). In this work, we used magnetron sputtering to deposit iron layer as a catalyst on silicon wafers. After that, radio frequency (rf) assisted PECVD reactor was used to grow CNTs. They were treated with wate...

Results on the characterization of the elecmcal properties of amorphous silicon-films for the three different growth methods, RF sputtering, PECVD, and LPCVD are reported. The performance of these a-Si films as heterojunctions on high resistivity p-type and n-type crystalline silicon is examined by measuring the noise, leakage current and the alpha particle response of 5 mm diameter detector st...

Diamond-like nanocomposite (DLN) thin films were deposited on pyrex glass or silicon substrate by plasma enhanced chemical vapor deposition (PECVD) method. These types of films have their unique number of structural, mechanical and tribological properties, which are quite similar with MEMS material properties. DLN films provide a number of unique and

An alloy based on the group IV elements germanium and tin has potential of yielding an earth-abundant low bandgap energy semiconductor material with applications in fields micro-electronics, optics, photonics photovoltaics. In this work, first steps towards plasma enhanced chemical vapour deposition (PECVD) processing a chemically stable, intrinsic GeSn:H are presented. Using tetramethyltin (TM...

Keywords: RF MEMS capacitive switch Dielectric charging Silicon nitride PECVD method a b s t r a c t The present paper aims to provide a better insight to the electrical characteristics of silicon nitride films that have been deposited with PECVD method under different conditions. The effect of film thickness, substrate temperature and the frequency that produces the plasma in PECVD method on t...

TiO2 is a promising photocatalyst, but its large bandgap restricts light absorption to the ultraviolet region. The addition of noble metals can reduce and electron-hole recombination; therefore, we prepared TiO2-Ag nanoparticle composite films by plasma-enhanced chemical vapor deposition (PECVD) using mixture aerosolized AgNO3, which was used as Ag precursor, titanium tetraisopropoxide, acted p...

To obtain reliable 3D stacking, a void-free bonding interface should be obtained during wafer-to-wafer direct bonding. Historically, SiO 2 is the most studied dielectric layer for applications, and it reported to form voids at interface. Recently, SiCN has raised as new candidate layer. Further understanding of mechanism behind void formation would allow avoid on different dielectrics. In this ...

PECVD Silicon Oxynitride (SiON) layers with different refractive indices (1.472-1.635) were grown and characterized. The as-deposited layers have good thickness uniformity (~1%) and a high homogeneity of the refractive index (~ 5x10-4) over the wafer area. For telecommunication application, however, the optical losses of the as-deposited layers are unacceptably high. Therefore, the loss reducti...