In this study, the impact of negative capacitance (NC) effect on process-induced variations, such as work function variation (WFV), random dopant fluctuation (RDF), and line edge roughness (LER), was investigated compared to those baseline junctionless nanowire FET (JL-NWFET) in both linear (Vds = 0.05 V) saturation 0.5 modes. Sentaurus TCAD MATLAB were used for simulation JL-NWFET (NC-JL-NWFET...

Nanosheets are the revolutionary change to overcome limitations of FinFET. In this paper, temperature dependence 10 nm junctionless (JL) nanosheet FET performance on DC and analog/RF characteristics investigated for first time using extended source/drain with high-k gate stack. The detailed analysis like transfer (ID-VGS), output (ID-VDS), drain induced barrier lowering (DIBL), subthreshold swi...