نتایج جستجو برای: inp

تعداد نتایج: 4104  

2017
Jan Dobrowolski John Goodrick

We prove that any left-ordered inp-minimal group is abelian and we provide an example of a non-abelian left-ordered group of dp-rank 2. Furthermore, we establish a necessary condition for group to have finite burden involving normalizers of definable sets, reminiscent of other chain conditions for stable groups. 0 Introduction and preliminaries One of the model-theoretic properties that gained ...

In this paper, a thin-film InP-based solar cell designed and simulated. The proposed InP solar cell has a periodic array of plasmonic back-reflector, which consists of a silver layer and two silver nanowires. The indium tin oxide (ITO) layer also utilized as an anti-reflection coating (ARC) layer on top. The design creates a light-trapping structure by using a plasmonic back-reflector and an an...

Journal: :Physical review. B, Condensed matter 1992
Alonso Castrillo Armelles Ruiz Recio Briones

Strained-layer superlattices (SL's) made up of alternate GaP and InP layers constitute a system where the strain is symmetrized when grown on GaAs substrates. While both components present a large lattice mismatch to GaAs ( —3.6% GaP, +3.8% InP) giving rise to large biaxial deformations in the individual layers, the net value of strain in the whole SL is very small, thus favoring their stabilit...

2012
JOEL SCHLEEH

iii List of appended papers v

2018
Ludovico Megalini Simone Tommaso Šuran Brunelli William O Charles Aidan Taylor Brandon Isaac John E Bowers Jonathan Klamkin

We report on the use of InGaAsP strain-compensated superlattices (SC-SLs) as a technique to reduce the defect density of Indium Phosphide (InP) grown on silicon (InP-on-Si) by Metal Organic Chemical Vapor Deposition (MOCVD). Initially, a 2 μm thick gallium arsenide (GaAs) layer was grown with very high uniformity on exact oriented (001) 300 mm Si wafers; which had been patterned in 90 nm V-groo...

2016
Christopher M. Collier Trevor J. Stirling Ilija R. Hristovski Jeffrey D. A. Krupa Jonathan F. Holzman

Photoconductive (PC) terahertz (THz) emitters are often limited by ohmic loss and Joule heating-as these effects can lead to thermal runaway and premature device breakdown. To address this, the proposed work introduces PC THz emitters based on textured InP materials. The enhanced surface recombination and decreased charge-carrier lifetimes of the textured InP materials reduce residual photocurr...

2012
Mohammad Reza Rakhshani Mohammad Ali Mansouri-Birjandi

In this paper, we have proposed an all-optical wavelength triplexer using photonic crystal resonant cavities. The photonic crystal rods is composed of three layers, InP-InGaAsP-InP, the substrate consists of InP with a refractive index of nInP=3.169 and the guiding layer is InGaAsP, with an index of nInGaAsP=3.364. The guiding layer is 0.510μm thick, and it has an InP top cladding of 1.500μm. T...

2017
Franz Conen Mikhail V. Yakutin Karl Espen Yttri Christoph Hüglin

Ice nucleating particles active at −8 ◦C or warmer (INP−8) are produced by plants and by microorganisms living from and on them. Laboratory studies have shown that large numbers of INP−8 are produced by decaying leaves. At three widely dispersed locations in Northwestern Eurasia, we saw, from an analysis of PM10 filter samples, that seasonal median concentrations of INP−8 in the boundary layer ...

2010
Muntasir Raihan Rahman Issam Aib Raouf Boutaba

Network virtualization can offer more flexibility and better manageability for the future Internet by allowing multiple heterogeneous virtual networks (VN) to coexist on a shared infrastructure provider (InP) network. A major challenge in this respect is the VN embedding problem that deals with the efficient mapping of virtual resources on InP network resources. Previous research focused on heu...

1997
Huaxiang Fu Alex Zunger

We present pseudopotential plane-wave electronic-structure calculations on InP quantum dots in an effort to understand quantum confinement and surface effects and to identify the origin of the long-lived and redshifted luminescence. We find that ~i! unlike the case in small GaAs dots, the lowest unoccupied state of InP dots is the G1c-derived direct state rather than the X1c-derived indirect st...

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