We have microfabricated two-dimensional ~2D! photonic band gap structures in a thin slab of dielectric material to define reflectors and high-Q microresonators. By selectively omitting holes from the 2D photonic crystal, optical microcavities, and in-plane microresonator switches can be defined. We have designed this structure with a finite difference time domain approach, and demonstrate the e...

Abstract We present a selective laterally wet etched collector InP/InGaAs/InGaAsP double heterojunction bipolar transistor (DHBT) with a quaternary step graded base collector structure. This device shows a DC current gain of = 70 over a large collector current range, a breakdown voltage of BVCE0 = 10.5 V, and a maximal collector emitter voltage of more than 5.5 V at 105 A/cm2 collector current ...

The Monte Carlo technique is used to calculate electrical as well as thermoelectric transport properties across thin-film heterostructures. We study a thin InGaAsP barrier layer sandwiched between two InGaAs contact layers, when the barrier thickness is in the 50 nm–2000 nm range. We found that with decreasing size, the effective Seebeck coefficient is increased substantially. The transition be...

A new approach for an electrically driven microlaser based on a microdisk transferred onto Silicon is proposed. The structure is based on a quaternary InGaAsP p-i-n junction including three InAsP quantum wells, on a thin membrane transferred onto silicon by molecular bonding. A p++/n++ tunnel junction is used as the p-type contact. The technological procedure is described and first experimental...

The spectral properties of grating-assisted directional couplers are studied using an improved coupled mode formulation. Key parameters for the design of these structures, such as the grating period, the coupling length, and other structural parameters, are calculated. The frequency response, the filter bandwidth, and the tuning range are analyzed. The technique is used to examine a specific ca...

We demonstrate experimentally negative refraction by a photonic crystal prism and imaging of a point source by a photonic crystal slab at 1.5 microm wavelength. The photonic crystal structures were nanofabricated in a InGaAsP/InP heterostructure platform, and optical characterization was performed using a near-field scanning optical microscope. By designing a suitable lens surface termination, ...

The temperature sensitivity of laser threshold current in single mode, wavelength tunable, InGaAsP bulk active region semiconductor lasers diodes is measured in the temperature range, 293 K 6 T 6 355 K and wavelength range 1.23 pm il < <, 1.35 pm. When proper account is taken of peak gain variation with temperature, the temperature dependence of laser threshold current (parameterized by T,) is ...

We have fabricated photonic crystal nanocavity lasers, based on a high-quality factor design that incorporates fractional edge dislocations. Lasers with InGaAsP quantum well active material emitting at 1550 nm were optically pumped with 10 ns pulses, and lased at threshold pumping powers below 220 mW, the lowest reported for quantum-well based photonic crystal lasers, to our knowledge. Polariza...

We demonstrate electrically pumped InGaAsP two-dimensional Bragg grating (2DBG) lasers with two line defects. The 2DBG structure uses a weak 2D index perturbation surface grating to control the optical modes in the plane of the wafer. Measurements of the 2DBG lasers show that modal control in both the longitudinal and transverse directions is due to the gratings and defects. The 2DBG lasers are...

Most optoelectronic devices for long haul optical communications are based on the InP/InGaAsP family of materials. Thin film coolers based on the same material system can be monolithically integrated with optoelectronic devices such as lasers, switches, and photodetectors to control precisely the device characteristics such as wavelength and optical power. Superlattice structures of InGaAs/InP ...