The electron-impact ionization cross section of Be is calculated using both a time-dependent and a timeindependent close-coupling method. The time-dependent method is based on the propagation of wave packets constructed using excited-state orbitals calculated in a core pseudopotential. The time-independent method is an R-matrix solution based on a total wave function constructed using antisymme...

This work demonstrates that excess hot-carrier currents in SO1 MOSFETs are caused by self-heating. Self-heating-free Ism data should be used for dynamic lifetime extrapolation due to long thermal time constant. The underlying mechanism, increased impact ionization with temperature at low drain bias, is studied experimentally from the angle of thermal activation energy. Our study indicates that ...

This paper considers the turn-off robustness (the maximal current being able to be turned off) of high power IGBTs under over current condition. The analysis of turn-off curves shows that the turn-off robustness of the investigated devices is not really limited by the rate of voltage rise on collector-emitter (dVCE / dt ). The main reason of the robustness limitation is found out to be the rate...

We observe the phenomenon of stochastic resonance in a semiconductor experiment. Originally, such an effect was predicted for bistable dynamical systems that are influenced by a periodic modulation as well as a random perturbation. In that case, a "resonance" peak can be observed in the power spectrum. The phenomenon investigated is the low-temperature impact ionization breakdown. There, bistab...

3 Collisional-radiative model for O atoms 4 3.1 Atomic model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3.2 Elementary rate coefficients . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3.2.1 Electron-impact excitation and deexcitation rate coefficients . . . . 7 3.2.2 Electron-impact ionization and three-body recombination rate coefficients . . . . . . . . . . ....

In this work we study the behaviour of the shallow Zn acceptor in GaxIn1−xAs Quantum Wells (1.5 nm < Lz < 5 nm) lattice matched to InP. The experimental results as obtained by photoluminescence and optically detected impact ionisation to determine the binding energy of Zn are compared with a theoretical calculation. The binding energy increases from the 3D bulk value for smaller Lz, passes thro...

-After defining the multiplication factor and the ionization rate together with their interrelationship, multiplication and breakdown models for diodes and MOS transistors are discussed. Different ionization models are compared and test structures are discussed for measuring the multiplication factor accurately enough for reliable extraction of the ionization rates. Multiplication measurements ...

A fraction of the interstellar atoms crosses the interface between the solar wind and the ionized component of the local interstellar medium (the heliospheric interface), and enters the heliosphere. The number of penetrating atoms depends on the strength of the atom-plasma interaction, i.e. on the atom type. In this paper we consider the penetration of the interstellar oxygen atoms, and we stud...

In this paper, we have investigated the turn-around effect of the threshold voltage (Vth) shift in the case of an n-type long channel MOSFET during hot-carrier stress. This effect is explained by the interplay between interface states and oxide traps, i.e. by the partial compensation of the rapidly created oxide charges by the more slowly created interface states. Significant hole trapping is o...

Low-temperature impact ionization breakdown in p-type germanium crystals gives rise to spon­ taneous oscillations of the current flow. We demonstrate experimental evidence of a particularly high-conducting dynamical state that is limited to a finite parameter regime of the current versus magnetic field characteristic. After bifurcation from a coexisting nonoscillatory state to periodicity, one ...