We numerically investigate the possibility of using Tunnel field-effect transistor (TFET) in a 32 kHz crystal oscillator circuit to reduce power consumption. A simulation using SPICE (Simulation Program with Integrated Circuit Emphasis) is carried out based on a conventional CMOS transistor model. It is shown that the power consumption of TFET is one-tenth that of conventional low-power CMOS.

Gate-all-around (GAA) MOSFETs use multiple nanowires (NWs) to achieve target ION, along with excellent 3-D electrostatic control of the channel. Although the self-heating effect has been a persistent concern, the existing characterization methods, based on indirect measure of mobility and specialized test structures, do not offer adequate spatiotemporal resolution. In this paper, we develop an ...

We present, here, advanced DFT-NEGF techniques that we have implemented in our ATOmistic MOdelling Solver, ATOMOS, to explore transport novel materials and devices particular van-der-Waals heterojunction transistors. describe methodologies using plane-wave DFT, followed by a Wannierization step, linear combination of atomic orbital leads an orthogonal non-orthogonal NEGF model, respectively. th...

Tunneling-field-effect-transistor (TFET) has emerged as an alternative for conventional CMOS by enabling the supply voltage (VDD) scaling in ultra-low power, energy efficient computing, due to its sub-60 mV/ decade sub-threshold slope (SS). Given its unique device characteristics such as the asymmetrical source/drain design induced uni-directional conduction, enhanced on-state Miller capacitanc...

In this paper, it is designed and analyzed the n type tunneling Field Effect Transistor (TFET) to obtain sub-threshold swing parameter (SS) below 60 mV/dec, it is better than the limit of conventional MOSFET. SILVACO TCAD is used for rigorous study of p-i-n structure based on Silicon. It is minimised the short channel effect of SiO2 material. It is obtained that TFET has good ability to produce...

In order to implement complementary logic function with L-shaped tunneling field-effect transistors (TFETs), current drivability and subthreshold swing (SS) need to be improved more. For this purpose, highk material such as hafnium dioxide (HfO2) has been used as gate dielectric rather than silicon dioxide (SiO2). The effects of device parameters on performance have been investigated and the de...

Background: In various cancers, Ganoderic Acid A (GAA), an active triterpenoid derived from Ganoderma lucidum, has been proved to show potent anti-tumor effects. However, the possible impacts of GAA on the human leukemia cell line (Nalm-6) are not fully elucidated. Therefore, this research aimed to study the antineoplastic effect of GAA on Nalm-6 cells. Materials and Methods: In this laborator...

The Internet of Things (IoT) is becoming increasingly popular in areas like wearable communication devices, biomedical and home automation systems. IoT-compatible processors or devices need larger integrated memory circuits, static random access (SRAM). design such a with fast times low leakage challenge. In this article, we have proposed 7T SRAM cell using an InGaAs-dual pocket-dual gate-tunne...

Vertical In0.53Ga0.47As tunnel field effect transistors (TFETs) with 100nm channel length and highk/metal gate stack are demonstrated with high Ion/Ioff ratio (>10). At VDS = 0.75V, a record on-current of 20μA/μm is achieved due to higher tunneling rate in narrow tunnel gap In0.53Ga0.47As. The TFETs exhibit gate bias dependent NDR characteristics at room temperature under forward bias confirmin...