We report on the nanosheet-thickness effects on the performance of top-gate MoS(2) field-effect transistors (FETs), which is directly related to the MoS(2) dielectric constant. Our top-gate nanosheet FETs with 40 nm thin Al(2)O(3) displayed at least an order of magnitude higher mobility than those of bottom-gate nanosheet FETs with 285 nm thick SiO(2), benefiting from the dielectric screening b...

This article reports degradation experiments on organic thin film transistors using the small organic molecule pentacene as the semiconducting material. Starting with degradation inert p-type silicon wafers as the substrate and SiO2 as the gate dielectric, we show the influence of temperature and exposure to ambient air on the charge carrier field-effect mobility, on-off-ratio, and threshold-vo...

This work presents a comparative analysis of top gate a-IGZO TFTs fabricated on both soda-lime-silica glass and alkali-free borosilicate glass. Low-temperature ALD is selected for the deposition of gate dielectric to minimize a thermal stress. Comparing with TFTs on alkali-free borosilicate glass, TFTs with soda-lime-glass show similar threshold voltage and subthreshold swing, but slightly degr...

RF MEMS capacitive switches capable of orderof-magnitude impedance changes have demonstrated operating lifetimes exceeding 100 billion switching cycles without failure. In situ monitoring of switch characteristics demonstrates no significant degradation in performance and quantifies the charging properties of the switch silicon dioxide film. This demonstration leads credence to the mechanical r...

High temperature operating life (HTOL) testing was performed on embedded planar capacitors (with epoxyBaTiO3 composite dielectric) by subjecting these devices to highly accelerated temperature and voltage aging conditions. The objective of HTOL testing was to precipitate avalanche breakdown failures as a result of defects in the composite dielectric. These defects include porosity, voids, and a...

It was attempted to assess the reliability of DRAMs at the package level. Since the most critical function of a DRAM storage cell is to retain the charge which represents its state, data retention was measured at nominal conditions as a function of refresh time on several 5-V, 4-Mbit memories and one 3.3-V, 16-Mbit memory. Model distributions were fitted to the failure distributions and extrapo...