In this paper for the first time we report a study on the small signal characterization and simulation of Single Halo (SH) thin film SOI nMOSFETs. The single halo structure has a high pocket impurity concentration near the source end of the channel and low impurity concentration on the drain side. Besides having excellent dc output characteristics, better Vth – L roll-off control, low DIBL, hig...

This research paper explains the effect of dimensions Gate-all-around Si nanowire tunneling field transistor (GAA Si-NW TFET) on ON/OFF current ratio, drain induces barrier lowering (DIBL), sub-threshold swing (SS), and threshold voltage (VT). These parameters are critical factors characteristics tunnel transistors. The Silvaco TCAD has been used to study electrical TFET. Output (gate voltage-d...

Abstract Reliability and controllability for a new scheme of gate-all-around field effect transistor (GAA-FET) with silicon channel utilizing sectorial cross section is evaluated in terms Ion/Ioff current ratio, transconductance, subthreshold slope, threshold voltage roll-off, drain induced barrier lowering (DIBL). In addition, the scaling behavior electronic figures merit comprehensively studi...

A comprehensive study of the scaling negative capacitance FinFET (NC-FinFET) is conducted with TCAD. We show that NC-FinFET can be scaled to "2.1nm node" and almost "1.5nm comes two nodes after industry "3nm node," which has 16nm Lg last node according International Roadmap for Devices Systems (IRDS). In addition, intervening nodes, meet IRDS Ion Ioff target at target-beating VDD. The benefits ...

A new Row-by-Row Dynamic Source-line Voltage control (RRDSV) scheme is proposed to reduce the active leakage as well as the stand-by leakage in SRAM. By dynamically controlling the source-line voltage of cells row by row, the cell leakage through inactive cells can be reduced by two orders of magnitude. Moreover, the bit-line leakage through pass transistors can be completely cut off. This leak...

In the present work, Dual Material Gate (DMG) AlGaN/GaN High Electron Mobility Transistor (HEMT) has been studied for its improved linearity performance on the basis of VIP3 (i.e. extrapolated input voltage at which the first and third order harmonic voltages are equal) and compared with the conventional Single Material Gate (SMG) AlGaN/GaN HEMT. The influence of the device parameters such as t...

For the first time, a deep study of gate control coefficient (αG) effect on CNTFET performance has done in this research. A new, analytical CNTFET simulation along with multiple parameter approach has executed with 3D output in MATLAB and that used it to examine device performance. It is found that, drain current and transconductance increases with high gate control coefficient. On the other ha...

In this paper, the EKV3.0 model used for RF analog designs was validated in all-inversion regions under bias conditions and geometrical effects. A conversion of empirical data of 180nm CMOS process to EKV model was proposed. A MATLAB developed algorithm for parameter extraction was set up to evaluate the basic EKV model parameters. Respecting the substrate, and as long as the source and drain v...

In this paper, we have proposed a novel FinFET with extended body under the poly gate, which is called EB-FinFET, and its characteristic is demonstrated by using three-dimensional (3-D) numerical simulation. We have analyzed and compared it with conventional FinFET. The extended body height dependence on the drain induced barrier lowering (DIBL) and subthreshold swing (S.S) have been also inves...