This paper describes modeling and simulation for the growth and dissolution of oxygen precipitates in Czochralski silicon(CZ) wafers during heat treatment. Growth and dissolution rates arc newly derived and inserted into a set of chemical rate equations(CILEs) and a Fokkor-Planck equation(FPE). Annealing ambients and surface conditions are taken into account for solving continuity equations in ...

Single crystals of NdVO4 were grown by the Czochralski method under ambient pressure in a nitrogen atmosphere. Obtained crystals were transparent with strong violet coloring. Temperature and angular dependences of electron paramagnetic resonance (EPR) spectra of the samples in the 3-103 K temperature range were analyzed applying Dyson like lineshape typically used for concentrated magnetic syst...

Materials processing systems, such as the Czochralski crystal growth system, are often characterized by the presence of a number of distinct materials and phases with signiicantly diierent thermophysical and transport properties. They may also contain irregular boundaries, moving interfaces and free surfaces. The understanding of the complex transport phenomena in these systems is of vital impo...

The solidification behavior of LuA103 melts in Bridgman geometry is presentedThe contribution of different growth parameters to crystallization of single phase LuA10, are studied. Growth scheme for L U A ~ O ~ N ~ ~ + crystals possessing improved laser properties is described. LuA103 (space group ~:E-~bnm) is the end member of the rhombic rareearth group (LnA103, where Ln = Y or Ln ion between ...