نتایج جستجو برای: cnfet
تعداد نتایج: 94 فیلتر نتایج به سال:
Abstarct---This paper proposes a new design of highly stable and low power SRAM cell using carbon nanotube FETs (CNTFETs) at 32nm technology node. As device physical gate length is reduced to below 65 nm, device non-idealities such as large parameter variations and exponential increase in leakage current make the I-V characteristics substantially different from traditional MOSFETs and become a ...
Carbon nanotubes have emerged as the leading candidate of electronic materials used for future nanoscale chemical and molecular sensors. Recently, nanotube field effect transistors (CNFETs) have been exploited as biodetectors of the thyroid hormone, triiodothyronine (T3). Although significant progress has been towards the development of actual nanotube based sensor devices, the next challenge i...
High speed Full-Adder (FA) module is an important element in designing high performance arithmetic circuits. In this paper, I propose a high speed multiple-valued logic FA module. The proposed FA is designed and constructed with the use of 3 capacitors and 14 transistors, wh e r e t h e t r a n s i s t or s a r e c o n s t r u c t e d b y carbon nano-tube field effect transistor (CNFET) technol...
The adder circuit is basic component of arithmetic logic design and that the most important block processor architecture. Moreover, power consumption main concern for real-time digital systems. In recent times, carbon nanotube field effect transistors (CNTFET) used designs with high performance. A creative substitute highspeed, less power, small size in area CNTFET. This paper presents 1- bit f...
This paper presents a ternary half adder and 1-trit multiplier using carbon nanotube transistors. The proposed circuits are designed pass transistor logic dynamic logic. Ternary uses less connections than binary logic, voltage changes required for the same amount of data transmission. Carbon transistors have advantages over MOSFETs, such as mobility electrons holes, ability to adjust threshold ...
In this paper a compact current-voltage model for MOSFET-like Carbon Nanotube Field Effect Transistors (MOSFET-like CNFET) is presented. To model these devices the one-dimensional drain/source current equation obtained from Landauer approach must be solved self-consistently with the equation relates the Fermi surface and carrier concentration. Also, numerically solve of the integral over densit...
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