نتایج جستجو برای: antimonide
تعداد نتایج: 342 فیلتر نتایج به سال:
Abstract This paper proposes a tunable filter composed of semiconductor-insulator-semiconductor (SIS) waveguide with ring resonator at terahertz(THz) frequency. The two-dimensional study the proposed structure has been done using finite element method. It is observed that device can be used for filtering THz frequency within range 0.4 to 0.9 by varying structural parameters. simulated promising...
Several antimonide-based compound semiconductor (ABCS) microstrip MMICs, an X-Band low-noise amplifier and an rf switch, using 0.1-μm gate length Antimonide Based Compound Semiconductor (ABCS) metamorphic InAs/AlSb HEMTs, have been fabricated and characterized on a 50 μm GaAs substrate. The compact 0.7 mm two-stage X-band LNA demonstrated a 1.25 dB noise-figure at 10 GHz with an associated gain...
The exponential rise in the density of silicon CMOS transistors has now reached a limit and threatening to end the microelectronics revolution. To tackle this difficulty, group III–V compound semiconductors due to their outstanding electron transport properties and high mobility are very actively being researched as channel materials for future highly scaled CMOS devices. In this paper, we have...
In this work, micro/nano-structured Bi0.5Sb1.5Te3 bulk thermoelectric materials were synthesized by mechanical alloying from elemental shots of Bi, Sb, and Te. Cold pressing and subsequent heat treatments with hydrogen reduction were used to form bulk solid samples with good thermoelectric properties in the temperature range around 75 ̊C to 100 ̊C. In comparison to crystal growth methods and chem...
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