Plasmonically enhanced metal-insulator-metal (MIM) type structures are popular among perfect absorbers and photodetectors in which the field enhancement (for increased absorption) mechanism is directly coupled with collection (photocurrent) processes. In this work we propose a device structure that decouples absorption and collection parts for independent optimization. Double-stacked MIM (i.e. ...

HEterojunction Interfacial Workfunction Internal Photoemission (HEIWIP) detectors using AlGaAs as both the emitter and the barrier material with different Al fractions for the two layers are demonstrated. The extension of the HEIWIP concept to wavelengths longer than 110 lm in the GaAs/AlGaAs system requires the use of AlGaAs as the emitter material to reduce the barrier height. The p-type dopi...

To meet the gate leakage specifications in the International Technology Roadmap for Semiconductors (ITRS), an intensive search is being conducted for alternative gate stack materials. Most of the studies have focused on basic material properties, but very little effort has been directed towards quantifying and understanding the effect of post metallization annealing (PMA) on the electrical prop...

GaAs/AlGaAs based Heterojunction Interfacial Workfunction Internal Photoemission (HEIWIP) detectors were used to demonstrate experimental split-off response that is based on hole transitions between light/heavy hole bands and the split-off band (spin-orbit). Preliminary results indicate that, this detection mechanism is more efficient than free carrier mechanism for NIR operation. An unoptimize...

Negative resistance devices offer opportunities in design of compact and fast analog and digital circuits. However, their implementation in logic applications has been limited due to their small ON current to OFF current ratios (peak to valley ratio). In this paper, a design for a 2-port negative resistance device based on arm-chair graphene nanoribbon is presented. The proposed structure takes...

Design, modeling, and optimization principles for GaAs/AlGaAs heterojunction interfacial workfunction internal photoemission (HEIWIP) infrared detectors for a broad spectral region are presented. Both n-type and p-type detectors with a single emitter or multiemitters, grown on doped and undoped substrates are considered. It is shown that the absorption, and therefore responsivity, can be increa...

Nanoscale carbon-nanotube field-effect transistors (CNTFETs) have been a focus of recent studies in next-generation semiconductor architecture. However, in numerous CNTFETs that have been proposed, process variations, as well as measurement fluctuations, have occurred regularly, hampering the development of these devices for practical applications. Moreover, it is difficult to control the condu...

The suppression of rectification at metal–Mott-insulator interfaces, which was previously shown by numerical solutions to the time-dependent Schrödinger equation and experiments on real devices, is reinvestigated theoretically using nonequilibrium Green’s functions. The one-dimensional Hubbard model is used for a Mott insulator. The effects of attached metallic electrodes are incorporated into ...

Based on the parabolic potential approach (PPA), scaling theory, and driftdiffusion approach (DDA) with effective band gap widening (BGW), we propose an analytical subthreshold current/swing model for junctionless (JL) cylindrical nanowire FETs (JLCNFETs). The work indicates that the electron density of Qm that is induced by the current factor minimum central potentialc,minand equivalen...

Using an ultrathin (∼ 15 nm in thickness) molybdenum oxide (MoOx, x < 3) layer as a transparent hole selective contact to n-type silicon, we demonstrate a room-temperature processed oxide/silicon solar cell with a power conversion efficiency of 14.3%. While MoOx is commonly considered to be a semiconductor with a band gap of 3.3 eV, from X-ray photoelectron spectroscopy we show that MoOx may be...