Epitaxial bilayer silicon oxide is a transferable two-dimensional material predicted to be wide band gap semiconductor, with potential applications for deep UV optoelectronics, or as building block of van der Waals heterostructures. The prerequisite any sort such the knowledge electronic structure, which we unveil using angle-resolved photoemission spectroscopy and rationalise help density func...

In this paper, properties of reflection phase in one-dimensional quaternary photonic crystals combining dispersive meta-materials and positive index materials are investigated by transfer matrix method. Two omnidirectional band gaps are located in the band structure of considered structure. However, we limit our studies to the frequency range of the second wide band gap. We observe that the val...

Silicon carbide (SiC) is a wide band gap material that shows great promise in high-power and high temperature electronics applications because of its high thermalconductivity and high breakdown electrical field. This paper describes how the outstanding physical andelectronic properties ofSiC permit the fabrication of devices that can operate athigher temperature and power levels than devices fa...

in this article, we suggested a novel design of polarization splitter based on coupler waveguide on inp substrate at 1.55mm wavelength. photonic crystal structure is consisted of two dimensional (2d) air holes embedded in inp/ingaasp material with an effective refractive index of 3.2634 which is arranged in a hexagonal lattice. the photonic band gap (pbg) of this structure is determined using t...

One novel 1-D europium thioindate-thioantimonate {[Eu(tepa)](2)[μ(2)-SbS(3)](μ(2)-H(2)O)}[Eu(tepa)In(4)S(9)]·0.25tepa (1, tepa = tetraethylenepentamine) has been solvothermally synthesized. 1 represents the first example of the coordination of a soft Lewis basic 1-D polymeric [In(4)S(9)(6-)](n) ligand to a hard Lewis acidic Eu(3+) ion. The wide-band-gap semiconductor and photoluminescence prope...

We demonstrate that the electrical conductivity of metal/semiconductor oxide heterojunctions can be increased over 7 orders of magnitude by inserting an ultrathin layer of LaAlO3. This counterintuitive result, that an interfacial barrier can be driven transparent by inserting a wide-gap insulator, arises from the large internal electric field between the two polar LaAlO3 surfaces. This field mo...