A method is described for measuring the bandgap narrowing in the base of a Si homojunction or SiISiGe heterojunction bipolar transistor from the temperature dependence of the collector current. The model includes the temperature dependence of the intrinsic carrier concentration, the bandgap, the minority carrier mobility, and freeze-out of dopant in the base. The analysis method is applied to t...

An electrically pumped ZnO homojunction random laser diode based on nitrogen-doped p-type ZnO nanowires is reported. Nitrogen-doped ZnO nanowires are grown on a ZnO thin fi lm on a silicon substrate by chemical vapor deposition without using any metal catalyst. The p-type behavior is studied by output characteristics and transfer characteristic of the nanowire back-gated fi eld-effect transisto...

A novel four-quadrant analog multiplier using floating gate MOS (FGMOS) transistors operating in the saturation region is presented. The drain current is proportional to the square of the weighted sum of the input signals. This square law characteristic of the FGMOS transistor is used to implement the quarter square identity by utilizing only six FGMOS transistors. The main features of this rem...

A C60-terminated self-assembled monolayer can be used to place molecular acceptor states at the interface between the semiconductor and gate insulator of an organic field effect transistor. The time dependence of the photoinduced charge transfer between pentacene and C60 has a fast component with a characteristic time of 1.9 s and slower component with a time constant of 32 and 48 s at the begi...

The six articles in this special section provide a broad perspective on future computing paradigms based nanoelectronic technology. Nanoelectronics, as the word implies, is literally electronics at nanoscale, i.e., with characteristic feature sizes less than 50 nm. By most measures, semiconductor microelectronics industry today largest and successful example of nanoelectronics nanotechnology ge...

We report an experimental study of ultra-high-frequency chaotic dynamics generated in a delaydynamical electronic device. It consists of a transistor-based nonlinearity, commercially-available amplifiers, and a transmission-line for feedback. The feedback is band-limited, allowing tuning of the characteristic time-scales of both the periodic and high-dimensional chaotic oscillations that can be...

106204-9494 IJECS-IJENS © August 2010 IJENS I J E N S  Abstract— Superlattice emitter resonant tunneling bipolar transistor (SE-RTBT) is facing problem due to thermal transfer of electrons over barrier which causes diminishing negative differential resistance (NDR) effect. Therefore resonant tunneling diode (RTD) with higher quasibound state energy causes transfer of electrons by RT effect ins...

We observe direct mechanical mixing in nanoelectromechanical transistors fabricated in semiconductor materials operating in the radio frequency band of 10 ∼ 1000 MHz. The device is made of a mechanically flexible pillar with a length of 240 nm and a diameter of 50 nm placed between two electrodes in an impedance matched coplanar wave guide. We find a nonlinear I-V characteristic, which enables ...

2014 The aim of this paper is to describe the modelling methods of the vertical channel MOS transistor (V. MOS) under DC and small signal HF conditions. By taking into account the scattering velocity saturation mechanisms, it will primarily be shown that (i) the drain current-gate voltage transfer characteristic becomes linear and (ii) the dynamic HF parameters are independent of the gate-sourc...