The effects of the single-event upset (SEU) generated by radiation on nanowire field-effect transistors (NW-FETs) and nanosheet (NS)-FETs were analyzed according to incident angle location radiation, using three-dimensional technology computer-aided design tools. greatest SEU occurred when particle was at 90°, whereas least 15°. significantly affected drain, as compared it source. NS-FETs robus...

Due to advance technologies transistor size shrinks which makes the devices more vulnerable to noise and radiation effect. This affects the reliability of memories. Built-in current sensors (BICS) have been success in the case of single event upset (SEC). The process is taken one step further by proposing specific error correction codes to protect memories against multiple-bit upsets and to imp...

Deep sub-micron memory devices play a crucial role in space electronic applications due to their susceptibility single-event upset and double-node types of soft errors. When charged particle from hit scaled circuit, the critical charge sensitive storage nodes drops, node happens across nodes. This paper describes error immune RHBD-14T SRAM cell (SEI-14T) for satellite applications. The SEI-14T ...

With the development of satellite communications, on-board processing (OBP) obtains more and more attentions due to the increased efficiency and performance. However, the large amounts of digital circuits in the OBP transponders are sensitive to the high-energy particles in space radiation environments, which may cause various kinds of single event effect. Among these effects, single event upse...

In recent years, graphene has received so much attention because of its superlative properties and potential to revolutionize electronics, especially in VLSI. This study analyzes the effect single-event upset (SEU) an SRAM cell, which employs a metal-oxide semiconductor type nano-ribbon field transistor (MOS-GNRFET) compares results with another cell designed using PTM 10 nm FinFET node. Our si...

this paper presents the hardware simulation (based on vhdl code) of a multiple-fault tolerant cellular genetic algorithm. this study aims to increase the immunity of cellular genetic algorithm in multiple-fault situation. here, multiple-fault refers to the situation that seu (single event upset) occurs simultaneously at two or more bits of the chromosome and fitness registers. the fault model i...

Many papers have presented models for estimating proton single event upset (SEU) cross sections from heavy-ion test data, but all rigorous treatments to date are based on the sensitive volume (SV) model for charge collection. Computer simulations have already shown that, excluding devices utilizing physical boundaries for isolation, there is no well-defined SV. A more versatile description of c...

Radiation test results and analyses are presented for ultra-low power Reed Solomon encoder circuits that are being considered for use on the Space Technology 5 (ST5) mission. The total ionizing dose tolerance is in excess of 100 krad(Si) and is due to the low supply voltage and the use of back-bias, which suppresses radiation-induced leakage currents in the n-channel devices. The circuits do no...

Based on the Yangbajing International Cosmic Ray Observatory in Lhasa with an altitude of 4300 m, a long-term real-time experiment is carried out order to measure atmospheric radiation induced soft errors 14 nm FinFET and 28 planar CMOS SRAM array. The underlying mechanisms are also revealed. Five boards used test, four which equipped 28-nm process devices, one board 14-nm devices. After removi...

Future technologies, below 90nm, will present transistors so small that they will be heavily influenced by electromagnetic noise and SEU induced errors. This way, together with process variability, design as known today is likely to change. Since several soft errors may occur in a small period of time, the traditional hypothesis that the behavior of a gate is fixed is no longer valid and a diff...