A novel device which combines advantages of Silicon Drift Detector and Silicon Avalanche Diode on the same silicon wafer is proposed. Avalanche ampliication is applied to cloud of drifting electrons in order to improve detection of radiation with low energy deposition coeecient. Principle and optimal conditions for the operation of this new detector based on Avalanche Ampliier are discussed.

A novel microfluidic fabrication technique which allows in situ formed silicon microchannels and does not necessitate substrate bonding is presented. A gas-permeable polymer membrane acts as the top surface of the microchannel, allowing xenon difluoride (XeF2) etchant to pass unobstructed to the silicon substrate. Exposed silicon areas on the wafer are then etched isotropically.

© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim Materials and fabrication procedures are described for bioresorbable transistors and simple integrated circuits, in which the key processing steps occur on silicon wafer substrates, in schemes compatible with methods used in conventional microelectronics. The approach relies on an unusual type of silicon on insulator wafer to yield devices that ...

This paper presents a method for ultrasonic characterization of porous silicon in which a genetic algorithm based optimization is used to solve the inverse problem. A one dimensional model describing wave propagation through a water immersed sample is used in order to compute transmission spectra. Then, a water immersion wide bandwidth measurement is performed using insertion/substitutionmethod...

In this paper we optimize the back-to-front overlay of Through Silicon Via (TSV) patterning for a 5μm via last process. After TSV patterning, overlay verification poses a challenge because the reference layer is buried underneath the thinned silicon wafer. For both back-to-front alignment and verification a wafer stepper equipped with a Dual Side Alignment (DSA) system is used. The stepper has ...

The traditional approach to harnessing the impurity-photovoltaic effect to improve solar cell performance is plagued by additional recombination caused by the impurity centres. This extra recombination channel is usually deemed to outweigh the benefits of additional generation of electron–hole pairs via sub-band-gap absorption through the impurity levels. Here we consider an alternative approac...

rapid thermal processing (rtp) has become a key technology for semiconductor device manufacturing in a variety of applications, such as thermal oxidation, annealing, and thin-film growth. hence, understanding the radiative properties of silicon and other relevant materials is essential for the analysis of the thermal transport processes. we have analyzed and calculated the spectral, directional...

We present an integrated silicon Michelson interferometer for OCT fabricated with wafer scale deep UV lithography. Silicon waveguides of the interferometer are designed with GVD less than 50 ps/nm.km. The footprint of the device is 0.5 mm x 3 mm. The effect of sidewall roughness of silicon waveguides has been observed, possible solutions are discussed.

The first step in integrated circuit (IC) fabrication is preparing the high purity single crystal Si wafer. This is the starting input to the fab. Typically, Si wafer refers to a single crystal of Si with a specific orientation, dopant type, and resistivity (determined by dopant concentration). Typically, Si (100) or Si (111) wafers are used. The numbers (100) and (111) refers to the orientatio...

Silicon germanium (SiGe) heterojunction transistors have been fabricated on bonded wafer, silicon-on-insulator (SOI) substrates. The devices have application in low power, radio-frequency electronics. The bonded wafer substrates incorporate poly-Si filled, deep trenches for isolation. A novel selective and non-selective low pressure chemical vapour deposition (LPCVD) growth process was used for...