Abstract Low Gain Avalanche Detectors (LGADs) are n-on-p silicon sensors with an extra p-layer below the collection electrode which provides signal amplification. When primary electrons reach amplification region new electron-hole pairs created that enhance generated signal. The moderate gain of these sensors, together relatively thin active region, provide precise time information for minimum ...

We demonstrate multiple bandgap integration on the hybrid silicon platform using quantum well intermixing. A broadband DFB laser array and a DFB-EAM array are realized on a single chip using four bandgaps defined by ion implantation enhanced disordering. The broadband laser array uses two bandgaps with 17 nm blue shift to compensate for gain roll-off while the integrated DFB-EAMs use the as-gro...

The title compound, C(19)H(25)NO(6), is a Z diastereomer in which the phenyl ring of the 3-benzyl-oxime substituent and the 5,6-O-isopropyl-idene acetal are both located on the Si-face of the C=N double bond. Inter-molecular C-H⋯O inter-actions result in helical chains along the b axis of the monoclinic unit cell.

Although silica aerogel is expected to be the material for energy savings, the lack of the strength prevents from commercial applications such as to low-density thermal insulators and acoustic absorbents. To improve mechanical properties, methyltrimethoxysilane (MTMS) and dimethyldimethoxysilane (DMDMS) are used as the co-precursor of aerogels in this study because the network becomes flexible ...

patients  with  primary  antibody  deficiencies  (pad)  are  susceptible  to  recurrent  and chronic infections and a variety of complications. this study was performed to assess quality of life (qol) of pad patients who were under long term treatment and regular follow-up.thirty six adults with proved diagnosis of pad, who had received regular intravenous immunoglobulin replacement therapy, we...

Transistor scaling has allowed a large number of circuits to be integrated into integrated circuit (IC) chips implemented in nanometer CMOS technology nodes. However, dark silicon which signifies for under-utilized circuitry will become dominant in future chips due to limited thermal design power (TDP). Furthermore, large voltage loss due to complex routing and placement will also degrade the p...

Final version, submitted to the International Conference on Radiation Effects on Semiconductor Materials, Detectors and Devices, held at the Universita’ di Firenze, Italy, March 6-8, 1996, to be published in NIM Abstract We present thermally stimulated current (TSC) spectra measured on asymmetric p-n-junctions fabricated from detector grade silicon. A multitude of characteristic deep levels gen...

We present a secure communication system constructed using pairs of nonlinear photonic physical unclonable functions (PUFs) that harness physical chaos in integrated silicon micro-cavities. Compared to a large, electronically stored one-time pad, our method provisions large amounts of information within the intrinsically complex nanostructure of the micro-cavities. By probing a micro-cavity wit...