The effect of diameter variation on electrical characteristics of long-channel InAs nanowire metal-oxide-semiconductor field-effect transistors is experimentally investigated. For a range of nanowire diameters, in which significant band gap changes are observed due to size quantization, the Schottky barrier heights between source/drain metal contacts and the semiconducting nanowire channel are ...

AlGaN/GaN Schottky Barrier Diodes (SBDs) employing the Diamond-like Carbon (DLC) passivation was proposed. The reverse blocking characteristics of the AlGaN/GaN SBD is degraded by the electron trapping effect through the surface trap states. In order to suppress the electron trapping effect and increase the breakdown voltage of AlGaN/GaN SBDs, the surface passivation or treatment should be perf...

We demonstrate the piezoelectric effect on the responsivity of a metal-semiconductor-metal ZnO micro-/nanowire photodetector. The responsivity of the photodetector is respectively enhanced by 530%, 190%, 9%, and 15% upon 4.1 pW, 120.0 pW, 4.1 nW, and 180.4 nW UV light illumination onto the wire by introducing a -0.36% compressive strain in the wire, which effectively tuned the Schottky barrier ...

a comprehensive study of schottky barrier mosfet (sbmosfet) scaling issue is performed to determine the role of wafer orientation and structural parameters on the performance of this device within non-equilibrium green's function formalism. quantum confinement increases the effective schottky barrier height (sbh). (100) orientation provides lower effective schottky barrier height in comparison ...

In this article, we report a magnetic tuning lateral photovoltaic effect (LPE) in a nonmagnetic Si-based Schottky junctions. In the magnetic field intensity range of 0 to 1.6 T, the variation amplitude of LPE sensitivity is as high as 94.8%, the change of LPV is and the change rate of lateral photo-voltage even reaches 520 mV/T at 1.5 T, which is apparently higher than the results of previous r...

Related Articles GaAs nanowire Schottky barrier photovoltaics utilizing Au–Ga alloy catalytic tips Appl. Phys. Lett. 101, 013105 (2012) Effective work functions for the evaporated metal/organic semiconductor contacts from in-situ diode flatband potential measurements Appl. Phys. Lett. 101, 013501 (2012) Controlled formation of charge depletion zones by molecular doping in organic pin-diodes and...

In this work, we describe the performance of organic Schottky barrier solar cells with the structure of ITO/molybdenum oxide (MoOx)/boron subphthalocyanine chloride (SubPc)/bathophenanthroline (BPhen)/Al. The SubPc-based Schottky barrier solar cells exhibited a short-circuit current density (Jsc) of 2.59 mA/cm(2), an open-circuit voltage (Voc) of 1.06 V, and a power conversion efficiency (PCE) ...

The influence of rapid thermal annealing effect on the electrical and structural properties of Au/Cu Schottky contacts on n-InP has been investigated by the current-voltage (I-V), capacitance-voltage (C-V), auger electron spectroscopy (AES) and the X-ray diffraction (XRD) techniques. As-deposited sample has a barrier height of 0.64 eV (IV), 0.76 eV (C-V) which increases to 0.82 eV (I-V), 1.04 e...

The present review summarizes a series of the most important historical contributions of German scientific researchers and industrial companies in Germany to the physics and applications of electromagnetic oscillations and waves during the past 140 years and intends to point out some relations to Russian scientists. The chronology highlights the following scientists: Philipp Reis (*1834-†1874):...

Deoxyribonucleic acid or DNA based sensors, especially as humidity and alpha particle sensors have become quite popular in recent times due to flexible and highly optimizable nature of this fundamental biomaterial. Application of DNA electronics allow for more sensitive, accurate and effective sensors to be developed and fabricated. In this work, we examined the effect of different humidity con...