In this brief a new low actuation voltage RF MEMS switch is presented which can be integrated and controlled with available CMOS technologies. Despite the advantages in the design of RF MEMS switches designing a low actuation voltage RF MEMS switch is still a challenging task. To overcome this problem, a small size RF MEMS switch utilizing a moving plate with multiple holes supported by a low s...

Aging produced by both DC and RF stress is experimentally analyzed on a RF CMOS power amplifier. The selected circuit topology allows observing individual NMOS and PMOS transistors degradations, as well as the aging effect on the circuit functionality. A direct relation between DC and RF (gain) parameters has been observed. NMOS degradation (both in mobility and Vth) is stronger than that of th...

(ABSTRACT) The explosive growth in wireless communications has led to an increased demand for wireless products that are cheaper, smaller, and lower power. Recently there has been an increased interest in using CMOS, a traditional digital and low frequency analog IC technology, to implement RF components such as mixers, voltage controlled oscillators (VCOs), and low noise amplifiers (LNAs). Fut...

This paper presents a new CMOS buffer circuit topology for radiofrequency (RF) applications based on a fully-differential voltage-combiner circuit, capable of operating at low-voltage. The proposed circuit uses a combination of common-source (CS) and common-drain (CD) devices. The simulation results show good levels of linearity and bandwidth. To improve total harmonic distortion (THD) a source...

Nanometer CMOS processes have proven to be surprisingly effective for analog and RF design. New design techniques have greatly improved the efficiency of ADCs and RF interfaces and also enabled new flexibility. Moving to techniques that are more digital in nature allows fast and easy changes in architecture and performance. Furthermore, from the standpoint of energy efficiency there can be fund...

A MICS band CMOS RF transmitter is presented for implantable cardioverter telemtry system. Current-reuse and gain boosting techniques are employed for reducing the current consumption as well as improving the output power. Fabricated in 0.18μm CMOS, the transmitter dissipates 9.3mW from a 1.8-V supply. Measurement shows that the gain boosting capability increases the output power by 1.3–5.5 dB,...