Carbon containing zirconia films are deposited from chemical vapor deposition (CVD) and plasma enhanced (PECVD), as being used thermal barrier coatings for many applications. Their conductivity has been measured temperatures ranging room temperature up to 450 K using the 3 ω method. It is shown that samples exhibit a lattice an electronic contribution reaching values 13 W/m/K CVD 5 PECVD at K. ...

The purpose of this paper is the design of an optoelectronic circuit based on a-SiC technology, able to act simultaneously as a 4-bit binary encoder or a binary decoder in a 4-to-16 line configurations and show multiplexer-based logical functions. The device consists of a p-i'(a-SiC:H)-n/p-i(a-Si:H)-n multilayered structure produced by PECVD. To analyze it under informationmodulated wave (color...

In this work, we describe a novel fabrication process of p-type interdigitated back contact (IBC) silicon solar developed by means of laser doping and laser firing techniques. We use dielectric layers both as dopant sources to create highly-doped regions and as passivating layers. In particular, we use phosphorus-doped silicon carbide stacks (a-SiCx (n)) deposited by Plasma Enhanced Chemical Va...

A proof-of-concept metal–insulator–semiconductor (MIS) AlGaN/GaN high-electron mobility transistor (HEMT) that uses a self-aligned 10 nm AlOx gate insulator and SiNx passivation in the device access regions was investigated. Self-alignment of the gate insulator to metal was achieved by utilizing a submicron tri-layer photoresist pattern to lift-off sequentially-deposited AlOx dielectric and Ni/...

The prevention of glow-to-arc transition exhibited by micro dielectric barrier discharge (MDBD), as well as its long lifetime, has generated much excitement across a variety of applications. Silicon nitride (SiNx) is often used as a dielectric barrier layer in DBD due to its excellent chemical inertness and high electrical permittivity. However, during fabrication of the MDBD devices with multi...

We present a powerful kinetic Monte Carlo (KMC) algorithm that allows one to simulate the growth of nanocrystalline silicon by plasma enhanced chemical vapor deposition (PECVD) for film thicknesses as large as several hundreds of monolayers. Our method combines a standard n-fold KMC algorithm with an efficient Markovian random walk scheme accounting for the surface diffusive processes of the sp...

In order to utilize the unique properties of carbon nanotubes in microelectronic devices, it is necessary to develop a technology which enables high yield, uniform, and preferential growth of perfectly aligned nanotubes. We demonstrate such a technology by using plasma-enhanced chemical-vapor deposition ~PECVD! of carbon nanotubes. By patterning the nickel catalyst, we have deposited uniform ar...

Abstract This paper reports on the fabrication and characterization of high quality factor (Q) copper (Cu) inductors with thick insulator on standard silicon (Si) substrate (ρ = 10–20 cm). The thickness and the area of the insulating layer are optimized for high Q by fabricating inductors on very thick (∼50 μm) embedded silicon dioxide (SiO2) islands and 4–20 μm thick PECVD SiO2 coated standard...

The synthesis of vertically aligned single-walled carbon nanotubes (VA-SWNTs) by plasma-enhanced chemical vapor deposition (PECVD) was achieved at 500-600 °C, using ethylene as the carbon source and 1 nm Fe film as the catalyst. For growth of high-quality VA-SWNTs in a plasma sheath, it is crucial to alleviate the undesirable ion bombardment etching effects by the optimization of plasma input p...