Thin silicon nitride (Si3N4) films deposited using plasma-enhanced chemical deposition (PECVD) method have been used as metalinsulator-metal (MIM) capacitor dielectric for GaAs heterojunction bipolar transistor (HBT) technology. The characteristics of the films, which were deposited at 300C, were found to be dependent on how the PECVD film was deposited. A silicon nitride film deposited as a mu...

Graphene and its derivatives hold a great promise for widespread applications such as field-effect transistors, photovoltaic devices, supercapacitors, and sensors due to excellent properties as well as its atomically thin, transparent, and flexible structure. In order to realize the practical applications, graphene needs to be synthesized in a low-cost, scalable, and controllable manner. Plasma...

Polypropylene (PP) powders are coated with silica nanoparticles in a fluidized bed to improve the flow behavior of and processability powder fusion. The produced situ via dusty plasma-enhanced chemical vapor deposition (PECVD) an atmospheric-pressure Ar/O2 plasma jet fixed at distributor plate bed. Hexamethyldisiloxane is used as precursor nanoparticles. influence oxygen concentration gas numbe...

Highly customized and free-formed products in flexible hybrid electronics (FHE) require direct pattern creation such as inkjet printing (IJP) to accelerate product development. In this work, we demonstrate the growth of graphene on Cu ink deposited polyimide (PI) by means plasma-enhanced chemical vapor deposition (PECVD), which provides simultaneous reduction, sintering, passivation further red...

Boron as thin film material is of relevance for use in modern micro- and nano-fabrication technology. In this research boron films are realized by a number physical chemical deposition methods, including magnetron sputtering, electron-beam evaporation, plasma enhanced vapor (CVD), thermal/non-plasma CVD, remote CVD atmospheric pressure CVD. Various physical, mechanical characteristics these inv...

We report the use of localized annealing via in situ heaters to induce a semi-permanent change in the refractive index of the cladding in ring resonator filters. When compared to other methods for post-fabrication trimming, this method has the advantage that no additional equipment, other than a supply of electrical power, is necessary to cause the index change. Two cladding materials were used...

(La0.5,Sr0.5)CoO3 (LSCO) ®lms were prepared by a sol-gel method on silica grown by various methods such as thermal oxidation, plasma enhanced chemical vapor deposition (PECVD) and atmospheric pressure chemical vapor deposition (APCVD). Polyvinyl alcohol (PVA) was used as a wetting agent to improve the surface wetting behavior of the LSCO precursor solution onto the silica. The surface wetting o...

Stopping the plasma-enhanced chemical vapor deposition (PECVD) once and maintaining the film in a vacuum for 30 s were performed. This was done several times during the formation of a film of i-layer microcrystalline silicon (μc-Si:H) used in thin-film silicon tandem solar cells. This process aimed to reduce defect regions which occur due to collision with neighboring grains as the film becomes...

This paper reports the preliminary development of a microand nano-fabricated carbon nanotube (CNT) –based electron source intended for micro-propulsion applications. The paper proposes a device that implements a trade-off between microfabrication complexity and performance using a 3D packaging technology to minimize interception and decouple the process flows of the grid and the emitter array. ...