نتایج جستجو برای: narrow band gap semiconductor

تعداد نتایج: 360555  

Journal: :international journal of nanoscience and nanotechnology 2015
m. mirzaei h. ahadi m. shariaty-niassar m. akbari

in this research fe-tio2 nanocomposites with different molar ratios of fe/ti were prepared as nano-photocatalyst using a modified sol-gel process at ambient temperature. crystallographic properties of nanocomposites were characterized by x-ray diffraction (xrd). surface morphology and mean particle size of nanocomposites were specified by field emission scanning electron microscopy (fesem) and ...

Journal: :Journal of The Surface Finishing Society of Japan 2018

Journal: :journal of optoelectronical nano structures 0
mahmoud nikoufard university of kashan masoud kazemi alamouti university of kashan

in this article, we suggested a novel design of polarization splitter based on coupler waveguide on inp substrate at 1.55mm wavelength. photonic crystal structure is consisted of two dimensional (2d) air holes embedded in inp/ingaasp material with an effective refractive index of 3.2634 which is arranged in a hexagonal lattice. the photonic band gap (pbg) of this structure is determined using t...

2007
E. M. Kazaryan L. S. Petrosyan H. A. Sarkisyan

The influence of hidden symmetry on two-dimensional excitonic states in semiconductor quantum wells is investigated. It is shown that excitonic states in quantum wells, with the parabolic dispersion law for the electron and hole, and Sommerfeld’s coefficients for excitonic transitions are determined only with the principle quantum number within the framework of two-dimensional Coulomb potential...

2014
Fangyu Yue Satyabrata Jit Weida Hu

Advances in the growth, analysis, and characterization of various narrow-gap semiconductors and low-dimensional opto-electronic device structures have brought revolution into the modern day's information and communication technology including optical communication and computing systems. The main objective of this special issue is to include the recent advances in the experimental and theoretica...

Journal: :Physical review. E 2016
Yunliang Wang Bengt Eliasson

A model is presented for the nonlinear interaction between a large-amplitude laser and semiconductor plasma in the semirelativistic quantum regime. The collective behavior of the electrons in the conduction band of a narrow-gap semiconductor is modeled by a Klein-Gordon equation, which is nonlinearly coupled with the electromagnetic (EM) wave through the Maxwell equations. The parametric instab...

Journal: :Physical review letters 2011
M D Leistikow A P Mosk E Yeganegi S R Huisman A Lagendijk W L Vos

We present time-resolved emission experiments of semiconductor quantum dots in silicon 3D inverse-woodpile photonic band gap crystals. A systematic study is made of crystals with a range of pore radii to tune the band gap relative to the emission frequency. The decay rates averaged over all dipole orientations are inhibited by a factor of 10 in the photonic band gap and enhanced up to 2× outsid...

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