III-(As, Sb) alloys are building blocks for various advanced optoelectronic devices, but the growth of their ternary or quaternary materials are commonly limited by spontaneous formation of clusters and phase separations during alloying. Recently, digital alloy growth by molecular beam epitaxy has been widely adopted in preference to conventional random alloy growth because of the extra degree ...

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Conductive atomic force microscopy, scanning electron microscopy, and x-ray diffraction were used to determine the effects of Ga/N flux ratio on the conductivity of current leakage paths in GaN grown by molecular beam epitaxy. Our data reveal a band of fluxes near Ga /N 1 for which these pathways ceased to be observable. We conclude that changes in surface defects surrounding or impurities alon...

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We systematically study the growth kinetics and the critical surface dynamics of cell monolayers by a class of computationally efficient cellular automaton models avoiding lattice artifacts. Our numerically derived front velocity relationship indicates the limitations of the Fisher-Kolmogorov-Petrovskii-Piskounov equation for tumor growth simulations. The critical surface dynamics corresponds t...

Aluminum plays a central role in the world of electronic oxide materials. Yet, aluminum sources are very difficult to handle during molecular-beam epitaxy, main reason for which is high oxidization potential aluminum. In this work, we present thorough study behavior thermal laser epitaxy. We identify two distinct operating regimes. At laser-beam fluences, source emanates reproducible fluxes ind...

We report the morphological and compositional characteristics and their effect on optical properties of Er-doped GaN grown by solid source molecular beam epitaxy on sapphire and hydride vapor phase epitaxy GaN substrates. The GaN was grown by molecular beam epitaxy on sapphire substrates using solid sources ~for Ga, Al, and Er! and a plasma gas source for N2. The emission spectrum of the GaN:Er...