نتایج جستجو برای: inp
تعداد نتایج: 4104 فیلتر نتایج به سال:
در این پایان نامه در ابتدا ساختار لایه و ناخالصی یک لیزر مبتنی بر مواد inp/ingaasp و ساختار بالک را بررسی و تحلیل نموده ایم. در این ساختار لایه ingaasp به عنوان لایه فعال و لایه های inp با ناخالصی تدریجی به عنوان لایه های تحدید استفاده شدند. این لیزر درطول موج µm 55/1 تشعشع خواهد داشت. سپس بجای لایه فعال ingaasp از سه جفت لایه inp/ingaas چاه کوانتومی استفاده گردید. ساختار جدید نشان می دهد که مش...
The thin-film vapor−liquid−solid (TF-VLS) growth technique presents a promising route for high quality, scalable, and cost-effective InP thin films for optoelectronic devices. Toward this goal, careful optimization of material properties and device performance is of utmost interest. Here, we show that exposure of polycrystalline Zn-doped TF-VLS InP to a hydrogen plasma (in the following referre...
Impressive microwave results have been published for both Single(SHBT) and Double(DHBT) Heterostructure Bipolar Transistors based upon the InP material system. InP-based SHBTs have been reported to have excellent high-frequency performances such as unity current-gain frequency (fT) of 200 GHz (1) and maximum oscillation frequency (fmax) of 236 GHz (2). The best results for InP-based DHBTs inclu...
A high performance InP/InGaAs SHBT technology will be presented. InP SHBT is advantageous in terms of low-cost monolithic integration with photodiodes for high-speed optical receiver frontend applications. We will demonstrate that, through optimized CAD geometries, the fabricated HBTs showed uniform and improved device performance. Our best results show that an fT of over 160 GHz and fmax of gr...
Fig. 1. Cross-section of self-aligned base-emitter junction from Teledyne 500nm HBT process [6] InP-based transistor technologies, both high electron mobility transistors (HEMTs) and double heterojunction bipolar transistors (DHBTs), have demonstrated the highest reported transistor RF figures-of-merit. Both device technologies have been reported with current gain cutoff frequencies (ft) in exc...
InP-based quantum dots (QDs) have attracted much attention for use in optical applications, and several types of QDs such as InP/ZnS, InP/ZnSeS, and InP/GaP/ZnS have been developed. However, early synthetic methods that involved rapid injection at high temperatures have not been able to reproducibly produce the required optical properties. They were also not able to support commercialization ef...
The direct growth of III-V nanostructures on silicon has shown great promise in the integration of optoelectronics with silicon-based technologies. Our previous work showed that scaling up nanostructures to microsize while maintaining high quality heterogeneous integration opens a pathway toward a complete photonic integrated circuit and high-efficiency cost-effective solar cells. In this paper...
We demonstrate vertically and laterally scaled GaAsSb/InP type-II DHBTs with fT = 670 GHz at 10.3 mA/μm emitter current density and off-state collector-emitter breakdown voltage BVCEO = 3.2 V. Small-signal modeling is used to extract delay terms and to identify material design and device fabrication requirements for next-generation devices with > 1 THz cutoff frequencies. INTRODUCTION InP based...
W42 Effect of a live-yeast-based product on colostrum quality and milk yield in first month of lactation on a private dairy farm. C. Julien*1,2, A. Fernandez3, and J. P. Marden3, 1INRA, UMR1289 TANDEM, Tissus Animaux Nutrition Digestion Ecosystème et Métabolisme, Castanet-Tolosan, France, 2Université de Toulouse, INPT ENSAT, INP-ENVT, UMR1289 TANDEM, Castanet-Tolosan, France, 3Lesaffre Feed Add...
We present the results of an InP HBT device development process. We have developed a new HBT device fabrication approach that represents a major departure from traditional compound semiconductor manufacturing techniques. The new generation of deep submicron InP-based HBTs presented here uses an ion implanted subcollector and offers significantly improved performance, integration, and device rel...
نمودار تعداد نتایج جستجو در هر سال
با کلیک روی نمودار نتایج را به سال انتشار فیلتر کنید