We demonstrate for the first time WDM multi-path routing through a monolithically integrated InP/InGaAsP 8 × 8 space and wavelength selective cross-connect. Data channels are dynamically routed from four input ports to the same output port with excellent OSNR from 27.0 to 31.1 dB. Representative data paths are evaluated in terms of optical power penalty. Data routing experiments are performed u...

We demonstrate one-dimensional nanobeam photonic bandedge lasers with InGaAsP quantum wells at room temperature from the lowest dielectric band of photonic crystal nanobeam waveguides. The incident optical power at threshold is 0.6 mW (effectively ~18 μW). To confirm the lasing from the dielectric bandedge, the polarization and the photoluminescent spectra are taken from nanobeams of varying la...

A novel design for an integrated passive polarization splitter/converter combination is presented. The device consists of a Mach–Zehnder interferometer with polarization converters in both arms. The device is analyzed using the transfer matrix method and fabricated in InGaAsP–InP. Measurement results show a splitting ratio of approximately 10 dB and a conversion of>90%. This device can be monol...

An etched beam splitter (EBS) photonic coupler based on frustrated total internal reflection (FTIR) is designed, fabricated and characterized in the InP/InGaAsP material system. The EBS offers an ultra compact footprint (8x11 μm) and a complete range of bar/cross coupling ratio designs. A novel pre-etching process is developed to achieve sufficient depth of the etched coupling gaps. Fabricated ...

Hybrid Si/III-V, Fabry-Perot evanescent lasers are demonstrated, utilizing InGaAsP as the III-V gain material for the first time to our knowledge. The lasing threshold current of 300-mum-long devices was as low as 24 mA, with a maximal single facet output power of 4.2 mW at 15 degrees C. Longer devices achieved a maximal single facet output power as high as 12.7 mW, a single facet slope efficie...