نتایج جستجو برای: high k dielectric
تعداد نتایج: 2396257 فیلتر نتایج به سال:
In the past few decades, gate insulators with a high dielectric constant (high-k dielectric) enabling a physically thick but dielectrically thin insulating layer, have been used to replace traditional SiOx insulator and to ensure continuous downscaling of Si-based transistor technology. However, due to the non-silicon derivative natures of the high-k metal oxides, transport properties in these ...
Articles you may be interested in Effect of vacuum-ultraviolet irradiation on the dielectric constant of low-k organosilicate dielectrics Appl. Bandgap measurements of low-k porous organosilicate dielectrics using vacuum ultraviolet irradiation Appl. The effects of plasma exposure and vacuum ultraviolet irradiation on photopatternable low-k dielectric materials Effect of vacuum ultraviolet and ...
We have designed and simulated a 10-nanometer regime gate High Electron Mobility Transistor (HEMT) with an undoped region (UR) under the high k dielectric as hafnium oxide (HfO2). The thickness of metal gate(G) regions are equal but length channel(C) is not equivalent. proposed Undoped reduces maximum electric field(V) in channel increases drain current significantly. High-K structure obtained ...
The high-k dielectric TiO2/ZrO2 bilayer composite film was prepared on a Si substrate by radio frequency magnetron sputtering and post annealing in N2 at various temperatures in the range of 573 K to 973 K. Transmission electron microscopy observation revealed that the bilayer film fully mixed together and had good interfacial property at 773 K. Metal-oxide-semiconductor capacitors with high-k ...
This paper describes integration of an advanced composite high-K gate stack (4nm TaSiOx-2nm InP) in the In0.7Ga0.3As quantum-well field effect transistor (QWFET) on silicon substrate. The composite high-K gate stack enables both (i) thin electrical oxide thickness (tOXE) and low gate leakage (JG) and (ii) effective carrier confinement and high effective carrier velocity (Veff) in the QW channel...
We analyzed the high frequency dielectric relaxation mechanism in high-k composite materials using film substrates made of low loss organic resin filled with ferroelectric ceramics and with single wall carbon nanotubes (SWNT). We performed broadband permittivity measurements of high-k film substrates at frequencies of 100 Hz to about 10 GHz. In order to analyze the effect of the dielectric thic...
Charge transport in carbon nanotube network transistors strongly depends on the properties of the gate dielectric that is in direct contact with the semiconducting carbon nanotubes. In this work, we investigate the dielectric effects on charge transport in polymer-sorted semiconducting single-walled carbon nanotube field-effect transistors (s-SWNT-FETs) by using three different polymer insulato...
The processing speeds of microchips continue to increase as integration densities increase in the semiconductor industry. When the device size is decreased, the so-called resistance– capacitance (RC) delay and the crosstalk noise between metal interconnects offset any gain in chip performance. To avoid these undesirable phenomena, lower dielectric insulating layers must be employed. In the near...
PbSrWO4 and PbBaWO4 have been synthesised by the solid state reaction technique XRD patterns show them to be tetragonal. Dielectric constant (K/) and Dielectric loss (K//) of PbSrWO4 and PbBaWO4 have been measured at 1 kHz in the temperature range of 300 to 1050 K. The log K/ vs T as well as log K// vs T plot of PbSrWO4 and PbBaWO4 shows rapid increase of dielectric constant above 590 K and 640...
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