Germanium-detectors are the most sensitive high-resolution γ detectors available and are the instrument in nuclear structure physics which allows important information about the structure of atomic nuclei to be obtained. The technology of High purity Germanium detectors is presented in [1]. The reported work is motivated by the needs for a new mechanical treatment procedure within the manufactu...

Rice plants accumulate high concentrations of silicon. Silicon has been shown to be involved in plant growth, high yield, and mitigating biotic and abiotic stresses. However, it has been demonstrated that inorganic arsenic is taken up by rice through silicon transporters under anaerobic conditions, thus the ability to efficiently take up silicon may be considered either a positive or a negative...

Micron-long germanium-based double-walled imogolite nanotubes were synthesized at high concentrations, as evidenced by cryo-TEM, AFM, SAXS and IR characterization methods. In addition, the spontaneous formation of a liquid-crystalline phase was observed. The novel synthesis route made it possible for the first time to obtain both long and concentrated germanium-based imogolite-like nanotubes in...

Novel germanium/phosphorus cage compounds with new structural motifs have been synthesized containing germanium in three different oxidation states. The key to obtain this new class of compounds is the use of monolithiated primary phosphine LiHPtBu in the reaction with GeX(2).

Electrical properties of semiconductor materials are greatly influenced by point defects such as vacancies and interstitials. These defects are common and form during the growth and processing of the material. Positron annihilation spectroscopy is a method suitable for detecting and studying vacancy-type lattice defects. In this work, the formation, properties, and annealing of vacancy defects ...

Direct lithiation of 1-(2-tetrahydrofuryl)-5-fluorouracil (Ftorafur) has been investigated. The treatment of ftorafur with lithium diisopropylamide (LDA)at -70 in ether-hexane, followed by the reaction with various electrophiles afforded the corresponding 6-substituted silicon, germanium and tin derivatives of ftorafur. The results of biological investigation indicate the ability of germanium-m...

Device of new type is suggested germanium detector with internal amplification. Such detector having effective threshold about 10 eV opens up fresh opportunity for investigation of dark matter, measurement of neutrino magnet moment, of neutrino coherent scattering at nuclei and for study of solar neutrino problem. Construction of germanium detector with internal amplification and perspectives o...

PMOS and NMOS mobility characteristics of the dual channel (strained Si/strained Ge) heterostructure have been reviewed. It is shown that the dual channel heterostructure can provide substantially enhanced mobilities for both electrons and holes. However, germanium interdiffusion from the germanium rich buried layer into the underlying buffer layer could potentially reduce the hole mobility enh...

The new bis(phosphaalkenyl) germanium(II) compound (NHC)Ge(CCl=PMes*)(2) reacts with L(2)M(CO)(4) (M = Mo, W) to give bidentate complexes with an unexpected coordinating behaviour involving the Ge(II) centre and one phosphorus atom, and with AuI or Me(2)SAuCl to afford the monodentate complexes coordinated at the germanium(II) atom.

To meet the unprecedented demands for data transmission speed and bandwidth silicon integrated photonics that can generate, modulate, process and detect light signals is being developed. Integrated silicon photonics that can be built using existing CMOS fabrication facilities offers the tantalizing prospect of a scalable and cost-efficient solution to replace electrical interconnects. Silicon, ...