We report the intrinsic and extrinsic electrical characteristics of advanced multilayer amorphous silicon (a-Si:H) thin-film transistor (TFT) with dual amorphous silicon nitride (a-SiNX:H) and a-Si:H layers. The thickness effect of the high electronic quality a-Si:H film on the transistor’s electrical property was investigated; with increasing film thickness, both field-effect mobility and subt...

Copper thin films with nano-scale structure have numerous applications in modern technology.  In this work, Cu thin films with different thicknesses from 50–220 nm have been deposited on glass substrate by DC magnetron sputtering technique at room temperature in pure Ar gas. The sputtering time was considered in 4, 8, 12 and 16 min, respectively. The thickness effect on the structural, mo...

A protective coating has been applied onto the phosphated panels using cathodic electrocoating in two different dry film thickness namely 8µm and 20µm. The corrosion resistance of cathodic electrocoatings has been studied using AC/DC/AC method. Twelve cycles of AC/DC/AC test were carried out on each sample which the DC voltage of the first 6 cycles were -4 V VS. Ag/AgCl @ 20 minutes followed by...

The mechanical properties of sputter-deposited NiTi shape memory alloy thin films ranging in thickness from 35 nm to 10 μm were examined using nanoindentation and atomic force microscopy (AFM). Indents made in films as thin as 150 nm showed partial shape recovery upon heating, although film thickness was found to have a marked effect on the results. A modified spherical cavity model is used to ...

Physical properties of materials are known to be different from the bulk at the nanometer scale. In this context, the dependence of optical properties of nanometric gold thin films with respect to film thickness is studied using density functional theory (DFT). We find that the in-plane plasma frequency of the gold thin film decreases with decreasing thickness and that the optical permittivity ...

A computational analysis of flow in simplex fuel atomizers using the arbitrary-Lagrangian–Eulerian method is presented. It is well established that the geometry of an atomizer plays an important role in governing its performance. We have investigated the effect on atomizer performance of four geometric parameters, namely, inlet slot angle, spin chamber convergence angle, trumpet angle, and trum...

The correlation-driven transition from a paramagnetic metal to a paramagnetic Mott-Hubbard insulator is studied within the half-filled Hubbard model for a thin-film geometry. We consider simple-cubic films with different low-index surfaces and film thickness d ranging from d = 1 (two-dimensional) up to d = 8. Using the dynamical mean-field theory, the lattice (film) problem is self-consistently...

We use grazing incidence x-ray scattering to study the molecular structure and morphology of thin ~,70 ML! crystalline films of 3,4,9,10-perylenetetracarboxylic dianhydride ~PTCDA! on Au~111! surfaces as a function of film thickness, substrate temperature, and growth rate. Although the first two PTCDA monolayers grow in a layer-by-layer fashion, the film evolution beyond the second monolayer de...

A simple model for the interfacial free energy of a semicoherent interface is used to develop expressions for interface stresses, which are surface thermodynamic quantities associated with solid–solid interfaces. An analysis of the thermodynamics of thin film epitaxy is presented that incorporates the effects of free surface and interface stresses, and an expression for the critical thickness f...