The difference between the performance of TSVs manufactured using SF6/O2 plasma etching or a Bosch process is explored through simulations. The geometric ratio of the sample TSV is approximately 5μm:58μm. The electrical performance of the devices is explored through capacitance and resistance extraction, while the reliability is analyzed using thermo-mechanical and electromigration simulations ...

Electromigration is a major road block in the pursuit of nanoelectronics and next generation power electronics. The current density in the state-of-the-art microelectronics solder joints is about 10 A/cm. In the next generation nanoelectronics solder joints this current density is expected to increase by an order of magnitude, at least. In this paper, a new damage mechanics formulation is imple...

The resistance change due to electromigration induced voiding in modern copper interconnects ended by a Through Silicon Via (TSV) is analyzed. It is shown that two different modes of resistance increase exist during the period of void growth under the TSV. Primarily responsible are imperfections at the TSV bottom introduced during the fabrication process. Consequently, the time to failure of su...

A finite element simulation of stress evolution in thin metal film during electromigration is reported in this paper. The electromigration process is modeled by a coupled diffusionmechanical partial differential equations (PDEs). The PDEs are implemented with a plane strain formulation and numerically solved with the finite element (FE) method. The evolutions of hydrostatic stress, each compone...

Electromigration in metal interconnects remains a significant challenge the continued scaling of integrated circuits towards ever-smaller single-nanometer nodes. Conventional damascene architectures barrier/liner layers and conducting cause inevitable compromises between device performance feature dimensions. In contrast to contemporary materials (e.g., Co, Ta, Ru), an ultrathin passivation lay...

We investigated the reversible electromigration in Pd-Pt nanobridges by means of in situ electron microscopy. Real-time nanometer-scale imaging with scanning transmission electron microscopy was used to determine the material transport. For high current densities (3-5 × 10(7) A cm(-2)), material transport occurs from the cathode towards the anode side, indicating a negative effective charge. Th...

Synchrotron X-ray analysis of the Sn electromigration behavior and whisker growth in a Blech structure using nano-X-ray fluorescence microscopy white beam Laue nanodiffraction was conducted. depletion at cathode whisker/extrusion formation anode were characterized in-situ, results obeyed kinetics. This scenario gradually decayed because counterbalance between electron wind force back stress. Wh...

The effects of immobilizing a thin layer of water adjacent to the surface of a colloidal particle are calculated using the Dynamic Stern Layer model introduced by Zukoski and Saville. Supposing water is immobilized by, for example, unreacted monomer or polymer chains dangling from the particle surface allows one to divide the diffuse layer into two regions, an outer region where transport is by...