نتایج جستجو برای: dropout voltage

تعداد نتایج: 113418  

Journal: :Mathematics 2022

In the automotive domain, vast majority of testing is performed through simulations, which can validate a system design before actual implementation and emphasize eventual faults in process. Hence, simulation utmost importance. Behavioral models are necessary for creation each electronic device desired system, some components have very complex behavior: low-dropout linear voltage regulators (LD...

احمدیه, محمد حسین , دهقانپور, محمد حسن , سلیمی, طاهره, سید حسنی, سید حسین , شهبازی, لیلی, کریمی, حسین,

Introduction: University's students are faced with a lot of problems such as dropout. There are many factors to happen and by destroyed. Aim of this study was to determine the student's opinions about most effective factors for academic dropout in Shahid Sadoughi University. Methods: This is a descriptive – analytic study. In total 40 students who had dropped out and 60 students who had not dro...

2016
Yuwen Bao XiaoLin Wu Xiaohong Xia Yun Gao

Positive charge pumps, also known as inductor-less DC/DC converters, are very common in white LED drivers. They are less expensive and simpler to use, but they usually achieve a lower efficiency than inductor-based boost circuits. In this paper, we describe a novel negative charge-pump design for a white LED driver that can automatically select the 1X/1.5X mode. Unlike a conventional positive c...

Journal: :Electronics 2023

An output-capacitorless low-dropout regulator (LDO) with a push–pull buffer was presented in this paper. The proposed able to provide large charge and discharge current increase the slew rate at gate of power transistor effectively, thereby improving transient response LDO. In addition, an adaptive resistance unit (ARU) solve right half-plane zero problem caused by Miller compensation optimize ...

Journal: :IEEE Transactions on Very Large Scale Integration (VLSI) Systems 2013

Journal: :JICS. Journal of integrated circuits and systems 2023

This paper presents the design of low-dropout volt-age regulators (LDO) using nanowire tunnel field-effect tran-sistors (TFETs) and MOSFET. The devices are mod-eled lookup tables implemented with experimental measures TFETs different source compositions (Si, SiGe Ge) In order to compare designs, transistors differential amplifier in all LDOs is biased gm/ID = 8 V-1 a load 1 μA 10-pF. It shown t...

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