Three Gd22xCexRuSr2Cu2O102d samples (x50.5, as prepared and after high pressure oxygenation and x 50.7) have been investigated by synchrotron powder x-ray diffraction and magnetization measurements. Precise coordinates and site occupancies for the oxygen atoms have been refined from the x-ray experiments. Estimates of the hole doping of the copper oxide planes based on the bond lengths, via the...

Abstract—This paper presents the design parameters for a thin film 3J InGaP/GaAs/Ge solar cell with a simulated maximum efficiency of 32.11% using Tcad Silvaco. Design parameters include the doping concentration, molar fraction, layers’ thickness and tunnel junction characteristics. An initial dual junction InGaP/GaAs model of a previous published heterojunction cell was simulated in Tcad Silva...

We report on a numerical study of electronic transport in chemically doped 2D graphene materials. By using ab initio calculations, a self-consistent scattering potential is derived for boron and nitrogen substitutions, and a fully quantum-mechanical Kubo-Greenwood approach is used to evaluate the resulting charge mobilities and conductivities of systems with impurity concentration ranging withi...

Doping in semiconductors is a fundamental issue for developing high performance devices. However, the doping behavior in Si nanocrystals (Si NCs) has not been fully understood so far. In the present work, P-doped Si NCs/SiO2 multilayers are fabricated. As revealed by XPS and ESR measurements, P dopants will preferentially passivate the surface states of Si NCs. Meanwhile, low temperature ESR sp...

Understanding the doping mechanism that involves substantial charge transfer between carbon nanotubes and chemical adsorbent is of critical importance for both basic scientific knowledge and nanodevice applications. Nevertheless, it is difficult to estimate the modification of electronic structures of the doped carbon nanotubes. Here we report measurements of electrochemical potentials of n-dop...

Carrier distributions associated with point charges in silicon solved with quantum perturbation theory are used to determine Coulombic interactions between charged defects in the presence of carrier screening. The resulting interactions are used in kinetic lattice Monte Carlo (KLMC) simulations of point defect-mediated diffusion to study dopant redistribution and associated variations in carrie...

Al-silicate fibers have excellent manufacturing quality. Unfortunately, high-Yb doping concentration may be limited by severe losses induced by photodarkening phenomenon. In this paper we demonstrate for the first time that Al-silicate Yb-doped fibers with high-inversion and doping concentration above 1 wt% can be successfully used by implementing a simple optical bleaching scheme. A co-injecti...

In this work, a new strategy for achieving efficient p-type doping in high bandgap nitride semiconductors to overcome the fundamental issue of high activation energy has been proposed and investigated theoretically, and demonstrated experimentally. Specifically, in an AlxGa(1-x)N/GaN superlattice structure, by modulation doping of Mg in the AlxGa(1-x)N barriers, high concentration of holes are ...

Cation substitutional doping is an effective approach to modifying the electronic and thermal transports in Bi₂Te₃-based thermoelectric alloys. Here we present a comprehensive analysis of the electrical and thermal conductivities of polycrystalline Pb-doped p-type bulk Bi0.48Sb1.52Te₃. Pb doping significantly increased the electrical conductivity up to ~2700 S/cm at x = 0.02 in Bi0.48-xPbxSb1.5...

The aim of this investigation was to determine the use of caffeine by athletes after its removal from the World Anti-Doping Agency list. For this purpose, we measured the caffeine concentration in 20 686 urine samples obtained for doping control from 2004 to 2008. We utilized only urine samples obtained after official national and international competitions. Urine caffeine concentration was det...