Related Articles Ultra-thin titanium oxide Appl. Phys. Lett. 101, 083113 (2012) Influence of doping on the electronic transport in GaSb/InAs(Sb) nanowire tunnel devices Appl. Phys. Lett. 101, 043508 (2012) Simulation of trap-assisted tunneling effect on characteristics of gallium nitride diodes J. Appl. Phys. 111, 123115 (2012) Tuning of terahertz intrinsic oscillations in asymmetric triple-bar...

We report an electronically switchable dielectric leaky wave antenna. The main beam angle can be electronically steered using p-i-n diodes. The diodes are used as switches to control the radiation from two sets of gratings with different periods, thereby switching the main beam angle. Beam steering is achieved at a single fixed frequency; no frequency sweeping is necessary. A microwave prototyp...

Integrated particle sensors have been developed using thin-film on ASIC technology. For this purpose, hydrogenated amorphous silicon diodes, in various configurations, have been optimized for particle detection. These devices were first deposited on glass substrates to optimize the material properties and the dark current of very thick diodes (with thickness up to 50 μm). Corresponding diodes w...

Related Articles Temperature-dependence of the internal efficiency droop in GaN-based diodes Appl. Phys. Lett. 99, 181127 (2011) Localized surface plasmon-enhanced electroluminescence from ZnO-based heterojunction light-emitting diodes Appl. Phys. Lett. 99, 181116 (2011) Performance enhancement of blue light-emitting diodes with AlGaN barriers and a special designed electronblocking layer J. Ap...

Related Articles Ultra-thin titanium oxide Appl. Phys. Lett. 101, 083113 (2012) Influence of doping on the electronic transport in GaSb/InAs(Sb) nanowire tunnel devices Appl. Phys. Lett. 101, 043508 (2012) Simulation of trap-assisted tunneling effect on characteristics of gallium nitride diodes J. Appl. Phys. 111, 123115 (2012) Tuning of terahertz intrinsic oscillations in asymmetric triple-bar...

Related Articles Anisotropic magneto-resistance in a GaMnAs-based single impurity tunnel diode: A tight binding approach Appl. Phys. Lett. 100, 062403 (2012) Full band atomistic modeling of homo-junction InGaAs band-to-band tunneling diodes including band gap narrowing Appl. Phys. Lett. 100, 063504 (2012) Degenerate p-doping of InP nanowires for large area tunnel diodes Appl. Phys. Lett. 99, 25...

Related Articles Ultra-thin titanium oxide Appl. Phys. Lett. 101, 083113 (2012) Influence of doping on the electronic transport in GaSb/InAs(Sb) nanowire tunnel devices Appl. Phys. Lett. 101, 043508 (2012) Simulation of trap-assisted tunneling effect on characteristics of gallium nitride diodes J. Appl. Phys. 111, 123115 (2012) Tuning of terahertz intrinsic oscillations in asymmetric triple-bar...

For the first time, 3D multiphysics finite element modelling has been used to optimise the geometry of a calorimetric thermal flow sensor. The model involves and couples three physics domains: electric, thermal and fluid mechanics. The model is validated against experimental data obtained from a thermoelectronic flow sensor comprising of a tungsten heating resistor and temperature sensing diode...

Gallium Nitride (GaN) is a very promising material for either electronic and optoelectronic devices because of its high breakdown field, and peak and saturated electron drift velocity. Hence, despite of its lower electron mobility, GaN Schottky diodes might represent a good alternative to GaAs Schottky diodes for LO power generation at millimetre-wave bands due to a much better power handling c...

background: total body irradiation (tbi) is different from standard radiotherapy in many aspects, so it is not easy to predict the delivered dose to the patient under tbi treatment. diode dosimetry procedures for surface dose reading can help to define variations of the actually delivered dose from the prescribed one. the aim of this study was to describe the measurements made to calibrate diod...