Efficient light management in optoelectronic devices requires nanosystems where high optical qualities coincide with suitable device integration. The requirement of chemical and electrical passivation for integrating nanostrutures in e.g. thin film solar cells points towards the use of insulating and stable dielectric material, which however has to provide high scattering and near-fields as wel...

The exponential growth in device density has yielded high-performance microprocessors containing two billion transistors [1]. The path toward such integration continues to require the implementation of new materials, processes, and design for interconnect and packaging structures. Since 1997, copper (Cu), which has a lower resistivity than aluminum (Al), has been selected as an interconnect mat...

The influence of the nature of interface between organic semiconductor and gate dielectric on bias stress electrical stability of n-type C60-based organic field effect transistors (OFETs) was studied. The bias stress induced threshold voltage (Vth) shift was found to depend critically on the OFET device structure: the direction of V(th) shift in top-gate OFETs was opposite to that in bottom-gat...

The drive toward increased semiconductor device densities and improved performance has set in motion the search for low-dielectric-constant materials. While introducing porosity in silica holds promise for reducing the dielectric constant, it remains elusive how to accomplish this without seriously degrading the thermomechanical performance. This article demonstrates a contemporary protocol for...

In this paper we report GaN:Eu AC-TDEL devices with high luminance and high efficiency levels obtained through optimized phosphor growth techniques and device structure. The GaN:Eu phosphor is grown using interrupted growth epitaxy (IGETM ). An improved thick dielectric layer for inorganic electroluminescent EL display devices has been achieved through a composite high-κ dielectric sol-gel/powd...

The paper discusses the design aspects of capacitive RF MEMS Symmetric Toggle Switch (STS) with particular emphasis on device compactness, reliability, and improvement in isolation & insertion loss by incorporating hafnium dioxide (HfO2) as a dielectric material. The major impact of the change from SiO2 to HfO2 having dielectric constant of 20, is the reduction in overall dimensions of the swit...

Multi-gate MOSFETs has shown better results in subthreshold performances. The replacement of SiO2 by high-k dielectric can fulfill the requirements of Multi-gate MOSFETS with scaling trend in device dimensions. The advancement in fabrication technology has also boosted the use of different high K dielectric materials as oxide layer at different places in MOSFET structures. One of the most impor...

The pull-in voltage instability associated with a simple MEMS device, consisting of a thin dielectric elastic membrane supported above a rigid conducting ground plate, is analyzed. The upper surface of the membrane is coated with a thin conducting film. In a certain asymptotic limit representing a thin device, the mathematical model consists of a nonlinear partial differential equation for the ...

We present superconducting nanowire single-photon detectors (SSPDs) on non-periodic dielectric multilayers, which enable us to design a variety of wavelength dependences of optical absorptance by optimizing the dielectric multilayer. By adopting a robust simulation to optimize the dielectric multilayer, we designed three types of SSPDs with target wavelengths of 500 nm, 800 nm, and telecom rang...