High-power arc lamp design has enabled ultrahigh-temperature sUHTd annealing as an alternative to conventional rapid thermal processing sRTPd for ultrashallow junction formation. The time duration of the UHT annealing technique is significantly reduced from those obtained through conventional RTP. This difference in time may offer the ability to maintain a highly activated ultrashallow junction...

Modeling of heat transfer is presented for the entire Czochralski Si-growth furnace. The axisymmetric steady-state approach with moving computational grids is used. Melt turbulent flow, inert gas flow, heat transfer in solid parts, and radiative heat transfer in the system are considered. The Reynolds-averaged Navier-Stokes equations written with the Boussinesq approximation and the energy equa...

We have processed pin-diodes and strip detectors on nand p-type high-resistivity silicon wafers grown by magnetic Czochralski method. The Czochralski silicon (Cz-Si) wafers manufactured by Okmetic Oyj have nominal resistivity of 900O cm and 1.9 kO cm for nand p-type, respectively. The oxygen concentration in these substrates is slightly less than typically in wafers used for integrated circuit ...

A free surface problem arising in the Czochralski (CZ) crystal growth process is considered. A mathematical model accounting for the interaction of the molten material with applied and induced magnetic fields, temperature-induced convection, rotating boundaries and a free surface is given. The model described avoids some common simplifying assumptions and allows for more general geometries, and...

Attempts to grow terbium aluminium garnet (Tb3Al5O12, TAG) by the Czochralski method lead to crystals of millimeter scale. Larger crystals could not be obtained. DTA measurements within the binary system showed that TAG melts incongruently at 1840 ◦C. The perovskite (TbAlO3, TAP) with a congruent melting point of 1930 ◦C is the most stable phase in this system. The region for primary crystalliz...

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Czochralski silicon D. Macdonald, F. Rougieux, A. Cuevas, B. Lim, J. Schmidt, M. Di Sabatino, and L. J. Geerligs Department of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra ACT 0200, Australia Institut für Solarenergieforschung Hameln (ISFH), Am Ohrberg 1, D-31860 Emmerthal, Germany SINTEF Materials and Chemistry, A. Getz v. 2B, 7465 Tron...