p-channel metal-oxide-semiconductor field-effect transistor with thermally grown GeO2 as interfacial passivation layer J. J. Gu, Y. Q. Liu, M. Xu, G. K. Celler, R. G. Gordon, and P. D. Ye School of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, USA Department of Chemistry and Chemical Biology, Harvard University, Cambridge,...

Alloying base contacts directly through an InGaP emitter layer provides excellent passivation of the GaAs base in HBTs. Processes which utilize this ledge formation scheme and a self-aligned, wet-chemical basecollector etch can suffer degradation in DC performance. Layouts with a hexagonal emitter can circumvent any DC performance degradation because the base electrode can be used as the etch m...

Surface passivation is critical for effective PCR using silicon-glass chips. We tested a dynamic polymer-based surface passivation method. Polyethylene glycol 8000 (PEG 8000) or polyvinylpyrrolidone 40 (PVP-40) applied at 0.75% (w/v) in the reaction mixture produced significant surface passivation effects using either native or SiO2-precoated silicon-glass chips. PCR amplification was achieved ...

In this study, the effect of different numbers of layers of reduced graphene oxide (RGO) on the ferromagnetic behavior of zinc oxide-reduced graphene oxide (ZnO-RGO) hybrid architectures has been investigated. Scanning and transmission electron microscopy along with x-ray diffraction of these hybrids confirm that ZnO nanorods are wrapped with different numbers of layers of RGO in a controlled w...

In this study the electronic quality of multicrystalline silicon material in the as grown state and after various POCl3 diffusion steps is analyzed. For this purpose two different surface passivations (quinhydrone-methanol and a-Si:H) are tested and also their reproducibility is checked. It is found that the chemical passivation using quinhydrone-methanol is more complicated to apply for detect...

Currently, aluminum oxide stacked with silicon nitride (Al2O3/SiNx:H) is a promising rear passivation material for high-efficiency P-type passivated emitter and rear cell (PERC). It has been indicated that atomic layer deposition system (ALD) is much more suitable to prepare high-quality Al2O3 films than plasma-enhanced chemical vapor deposition system and other process techniques. In this stud...

The following study focuses on the photoluminescence (PL) enhancement of chemically synthesized silicon oxycarbide (SiCxOy) thin films and nanowires through defect engineering via post-deposition passivation treatments. SiCxOy materials were deposited via thermal chemical vapor deposition (TCVD), and exhibit strong white light emission at room-temperature. Post-deposition passivation treatments...

We report a correlative analysis between corona oxide characterization of semiconductor (COCOS) and Kelvin probe force microscopy (KPFM) in study embedded silicon surfaces the field chemical field-effect passivation. The COCOS approach gives access to defect density, total charge contained passivation stack, potential barrier. Based on parameters, we could by KPFM analyze influence stack upon s...

2014 Influence and passivation of extended crystallographic defects are investigated in large grained polycrystalline silicon wafers and N+ P solar cells. When the mean grain size exceeds 1 mm, the influence of intragrain defects becomes predominant. It was found that the defects have not by themselves a noticeable recombination activity and that the segregation of impurities (oxygen...), could...

A proof-of-concept metal–insulator–semiconductor (MIS) AlGaN/GaN high-electron mobility transistor (HEMT) that uses a self-aligned 10 nm AlOx gate insulator and SiNx passivation in the device access regions was investigated. Self-alignment of the gate insulator to metal was achieved by utilizing a submicron tri-layer photoresist pattern to lift-off sequentially-deposited AlOx dielectric and Ni/...