In this study, vertical tunnel FET-based ternary CMOS (T-CMOS) is introduced and its electrical characteristics are investigated using TCAD device mixed-mode simulations with experimentally calibrated tunneling parameters. This new T-CMOS utilizes two different types of currents to form three output voltage states: (1) source-to-drain current; (2) conventional source-to-channel current. To a ha...

Silicon-on-insulator (SOI) has been the forerunner of the CMOS technology in the last decade offering superior CMOS devices with higher speed, higher density, excellent radiation hardness and reduced second order effects for submicron VLSI applications. Recent experimental studies have invigorated interest in fully depleted (FD) SOI devices because of their potentially superior scalability rela...

Hybrid thermionic-photovoltaics (TIPV) are solid-state thermal-to-electric energy converters that rely on the non-isothermal transport of photons and electrons through a vacuum gap. In contrast to pure thermionic converters, absorption in photovoltaic anode produces an electrochemical potential can be delivered as electricity, ultimately boosting power generation capacity device. this work, pro...

An in-depth understanding of the electronic properties grain boundaries (GBs) in polycrystalline semiconductor absorbers is high importance since their charge carrier recombination rates may be very and hence limit solar cell device performance. Kelvin Probe Force Microscopy (KPFM) method choice to investigate GB band bending on nanometer scale thereby helps develop passivation strategies. Here...

In this paper, we propose and simulate a multifunctional transistor that exhibits device reconfigurability realizes both nFET pFET electrical characteristics when adequately biased. The use of will significantly reduce the count in realizing sequential combinational circuits result highly compact design. uses dual fin structure having single mid-gap workfunction gate ( $\sim $ 4.65 eV) alongsid...

Due to the large surface to volume ratio in nanowires, small changes in surface condition result in large changes in current–voltage characteristics. As a consequence, the overlap of the end-wire contact with the oxide-covered surface along the length of the nanowire can have a significant effect on the current–voltage characteristics of the wire. We present TCAD studies of this effect. One of ...

Colloidal quantum dots (QDs) are an emerging class of new materials due to their unique physical properties. In particular, colloidal QD based light emitting diodes (QDLEDs) have been extensively studied and developed for the next generation displays and solid-state lighting. Among a number of approaches to improve performance of the QDLEDs, the most practical one is optimization of charge tran...

A new type of bottom-emission electroluminescent device is described in which a metal oxide is used as the electron-injecting contact. The preparation of such a device is simple. It consists of the deposition of a thin layer of a metal oxide on top of an indium tin oxide covered glass substrate, followed by the solution processing of the light-emitting layer and subsequently the deposition of a...